Temperature and polarization dependence of the near-band-edge photoluminescence in a non-polar ZnO film grown by using molecular beam epitaxy

Yoon Sung Nam, Sang Wook Lee, K. S. Baek, Soo Kyung Chang, Ji Wook Ryu, Jung Hoon Song, Seok Kyu Han, Soon Ku Hong, Takafumi Yao

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We investigated the temperature and the polarization dependence of the near-band-edge photoluminescence (PL) in non-polar (A-plane) ZnO films on R-plane sapphire grown by using plasma-assisted molecular beam epitaxy. We observed the band-edge emissions from the non-polar ZnO film at 3.449 and 3.386 eV, which were identified as a recombination of free excitons and as excitons bound to neutral donors (D0X) respectively. By analyzing the temperature dependent PL spectra, we attributed the transitions at 3.326 eV to the transition of free electrons in the conduction band to carriers bound to acceptors (FB). All the transitions in non-polar ZnO were blueshifted significantly by the anisotropic compressive strain. The polarized PL showed strong in-plane anisotropy of excitonic transitions even with the existence of strong strain. At low temperature, all the observed excitonic PL of non-polar ZnO was more than 90% polarized perpendicular to c-axis which lay in the film's plane. We report that the D0X and the FB transitions show 93% and 90% polarizations at 12 K and 82% and 80% polarization at 130 K, respectively.

Original languageEnglish
Pages (from-to)288-291
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number1
DOIs
Publication statusPublished - 2008 Jan 1

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molecular beam epitaxy
photoluminescence
temperature dependence
polarization
excitons
free electrons
conduction bands
sapphire
anisotropy
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Nam, Yoon Sung ; Lee, Sang Wook ; Baek, K. S. ; Chang, Soo Kyung ; Ryu, Ji Wook ; Song, Jung Hoon ; Han, Seok Kyu ; Hong, Soon Ku ; Yao, Takafumi. / Temperature and polarization dependence of the near-band-edge photoluminescence in a non-polar ZnO film grown by using molecular beam epitaxy. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 1. pp. 288-291.
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abstract = "We investigated the temperature and the polarization dependence of the near-band-edge photoluminescence (PL) in non-polar (A-plane) ZnO films on R-plane sapphire grown by using plasma-assisted molecular beam epitaxy. We observed the band-edge emissions from the non-polar ZnO film at 3.449 and 3.386 eV, which were identified as a recombination of free excitons and as excitons bound to neutral donors (D0X) respectively. By analyzing the temperature dependent PL spectra, we attributed the transitions at 3.326 eV to the transition of free electrons in the conduction band to carriers bound to acceptors (FB). All the transitions in non-polar ZnO were blueshifted significantly by the anisotropic compressive strain. The polarized PL showed strong in-plane anisotropy of excitonic transitions even with the existence of strong strain. At low temperature, all the observed excitonic PL of non-polar ZnO was more than 90{\%} polarized perpendicular to c-axis which lay in the film's plane. We report that the D0X and the FB transitions show 93{\%} and 90{\%} polarizations at 12 K and 82{\%} and 80{\%} polarization at 130 K, respectively.",
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Temperature and polarization dependence of the near-band-edge photoluminescence in a non-polar ZnO film grown by using molecular beam epitaxy. / Nam, Yoon Sung; Lee, Sang Wook; Baek, K. S.; Chang, Soo Kyung; Ryu, Ji Wook; Song, Jung Hoon; Han, Seok Kyu; Hong, Soon Ku; Yao, Takafumi.

In: Journal of the Korean Physical Society, Vol. 53, No. 1, 01.01.2008, p. 288-291.

Research output: Contribution to journalArticle

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T1 - Temperature and polarization dependence of the near-band-edge photoluminescence in a non-polar ZnO film grown by using molecular beam epitaxy

AU - Nam, Yoon Sung

AU - Lee, Sang Wook

AU - Baek, K. S.

AU - Chang, Soo Kyung

AU - Ryu, Ji Wook

AU - Song, Jung Hoon

AU - Han, Seok Kyu

AU - Hong, Soon Ku

AU - Yao, Takafumi

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N2 - We investigated the temperature and the polarization dependence of the near-band-edge photoluminescence (PL) in non-polar (A-plane) ZnO films on R-plane sapphire grown by using plasma-assisted molecular beam epitaxy. We observed the band-edge emissions from the non-polar ZnO film at 3.449 and 3.386 eV, which were identified as a recombination of free excitons and as excitons bound to neutral donors (D0X) respectively. By analyzing the temperature dependent PL spectra, we attributed the transitions at 3.326 eV to the transition of free electrons in the conduction band to carriers bound to acceptors (FB). All the transitions in non-polar ZnO were blueshifted significantly by the anisotropic compressive strain. The polarized PL showed strong in-plane anisotropy of excitonic transitions even with the existence of strong strain. At low temperature, all the observed excitonic PL of non-polar ZnO was more than 90% polarized perpendicular to c-axis which lay in the film's plane. We report that the D0X and the FB transitions show 93% and 90% polarizations at 12 K and 82% and 80% polarization at 130 K, respectively.

AB - We investigated the temperature and the polarization dependence of the near-band-edge photoluminescence (PL) in non-polar (A-plane) ZnO films on R-plane sapphire grown by using plasma-assisted molecular beam epitaxy. We observed the band-edge emissions from the non-polar ZnO film at 3.449 and 3.386 eV, which were identified as a recombination of free excitons and as excitons bound to neutral donors (D0X) respectively. By analyzing the temperature dependent PL spectra, we attributed the transitions at 3.326 eV to the transition of free electrons in the conduction band to carriers bound to acceptors (FB). All the transitions in non-polar ZnO were blueshifted significantly by the anisotropic compressive strain. The polarized PL showed strong in-plane anisotropy of excitonic transitions even with the existence of strong strain. At low temperature, all the observed excitonic PL of non-polar ZnO was more than 90% polarized perpendicular to c-axis which lay in the film's plane. We report that the D0X and the FB transitions show 93% and 90% polarizations at 12 K and 82% and 80% polarization at 130 K, respectively.

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