Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells

Hongsik Jeong; In Ja Lee; Jung Chul Seo; Minyung Lee; Dongho Kim; Seong Ju Park; Seung Han Park; Ung Kim

doi:10.1016/0038-1098(93)90357-S

Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells

Hongsik Jeong, In Ja Lee, Jung Chul Seo, Minyung Lee, Dongho Kim, Seong Ju Park, Seung Han Park, Ung Kim

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single phonon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.

Original language	English
Pages (from-to)	111-114
Number of pages	4
Journal	Solid State Communications
Volume	85
Issue number	2
DOIs	https://doi.org/10.1016/0038-1098(93)90357-S
Publication status	Published - 1993 Jan

Bibliographical note

Funding Information:
Acknowledgements - This work was financially supported by MOST and KOSEF through Center for Molecular Science (D.Kim) and bv the Ministrv of Education and KOSEF (Yonsei U&ersity). ’

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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10.1016/0038-1098(93)90357-S

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title = "Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells",

abstract = "Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single phonon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.",

author = "Hongsik Jeong and Lee, {In Ja} and Seo, {Jung Chul} and Minyung Lee and Dongho Kim and Park, {Seong Ju} and Park, {Seung Han} and Ung Kim",

note = "Funding Information: Acknowledgements - This work was financially supported by MOST and KOSEF through Center for Molecular Science (D.Kim) and bv the Ministrv of Education and KOSEF (Yonsei U&ersity). {\textquoteright}",

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doi = "10.1016/0038-1098(93)90357-S",

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TY - JOUR

T1 - Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells

AU - Jeong, Hongsik

AU - Lee, In Ja

AU - Seo, Jung Chul

AU - Lee, Minyung

AU - Kim, Dongho

AU - Park, Seong Ju

AU - Park, Seung Han

AU - Kim, Ung

N1 - Funding Information: Acknowledgements - This work was financially supported by MOST and KOSEF through Center for Molecular Science (D.Kim) and bv the Ministrv of Education and KOSEF (Yonsei U&ersity). ’

PY - 1993/1

Y1 - 1993/1

N2 - Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single phonon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.

AB - Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single phonon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.

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U2 - 10.1016/0038-1098(93)90357-S

DO - 10.1016/0038-1098(93)90357-S

M3 - Article

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SN - 0038-1098

VL - 85

SP - 111

EP - 114

JO - Solid State Communications

JF - Solid State Communications

IS - 2

ER -

Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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