Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells

Hongsik Jeong, In Ja Lee, Jung Chul Seo, Minyung Lee, Dongho Kim, Seong Ju Park, Seung Han Park, Ung Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single phonon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalSolid State Communications
Volume85
Issue number2
DOIs
Publication statusPublished - 1993 Jan 1

Fingerprint

Relaxation processes
Semiconductor quantum wells
aluminum gallium arsenides
quantum wells
Excitons
excitons
Temperature
temperature
Luminescence
Photoluminescence
counting
luminescence
photoluminescence
Defects
defects
decay
gallium arsenide
LDS 751

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Jeong, Hongsik ; Lee, In Ja ; Seo, Jung Chul ; Lee, Minyung ; Kim, Dongho ; Park, Seong Ju ; Park, Seung Han ; Kim, Ung. / Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells. In: Solid State Communications. 1993 ; Vol. 85, No. 2. pp. 111-114.
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Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells. / Jeong, Hongsik; Lee, In Ja; Seo, Jung Chul; Lee, Minyung; Kim, Dongho; Park, Seong Ju; Park, Seung Han; Kim, Ung.

In: Solid State Communications, Vol. 85, No. 2, 01.01.1993, p. 111-114.

Research output: Contribution to journalArticle

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AU - Jeong, Hongsik

AU - Lee, In Ja

AU - Seo, Jung Chul

AU - Lee, Minyung

AU - Kim, Dongho

AU - Park, Seong Ju

AU - Park, Seung Han

AU - Kim, Ung

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