Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells

Hongsik Jeong, In Ja Lee, Jung Chul Seo, Minyung Lee, Dongho Kim, Seong Ju Park, Seung Han Park, Ung Kim

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single phonon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalSolid State Communications
Issue number2
Publication statusPublished - 1993 Jan

Bibliographical note

Funding Information:
Acknowledgements - This work was financially supported by MOST and KOSEF through Center for Molecular Science (D.Kim) and bv the Ministrv of Education and KOSEF (Yonsei U&ersity). ’

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry


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