Temperature and size dependent excitonic relaxation process in GaAs/AlGaAs quantum wells

Hongsik Jeong, In Ja Lee, Jung Chul Seo, Minyung Lee, Dongho Kim, Seong Ju Park, Seung Han Park, Ung Kim

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Temperature dependent risetimes of exciton luminescence in different size quantum wells are obtained by using time correlated single phonon counting technique. The decreasing rate of risetimes with increasing temperature, the photoluminescence spectra, and the temperature dependent decay times consistently show that excitons are likely to be localized on interface defects as the well size decreases.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalSolid State Communications
Volume85
Issue number2
DOIs
Publication statusPublished - 1993 Jan

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

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