Annealing temperature dependence of band alignments in Hf-Al-O and Al 2O3 thin films, grown on p-Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf-Al-O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al2O3 film shows a nearly symmetric band offsets.
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry