Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100)

H. Jin, S. K. Oh, H. J. Kang, Y. S. Lee, M. H. Cho

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

Annealing temperature dependence of band alignments in Hf-Al-O and Al 2O3 thin films, grown on p-Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf-Al-O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al2O3 film shows a nearly symmetric band offsets.

Original languageEnglish
Pages (from-to)502-505
Number of pages4
JournalSurface and Interface Analysis
Volume38
Issue number4
DOIs
Publication statusPublished - 2006 Apr 1

Fingerprint

Electron energy loss spectroscopy
Valence bands
X ray photoelectron spectroscopy
alignment
Annealing
Thin films
temperature dependence
Atomic layer deposition
Conduction bands
Energy gap
Temperature
energy dissipation
Electrons
electron energy
valence
annealing
thin films
atomic layer epitaxy
spectroscopy
conduction bands

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Jin, H. ; Oh, S. K. ; Kang, H. J. ; Lee, Y. S. ; Cho, M. H. / Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100). In: Surface and Interface Analysis. 2006 ; Vol. 38, No. 4. pp. 502-505.
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Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100). / Jin, H.; Oh, S. K.; Kang, H. J.; Lee, Y. S.; Cho, M. H.

In: Surface and Interface Analysis, Vol. 38, No. 4, 01.04.2006, p. 502-505.

Research output: Contribution to journalArticle

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T1 - Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100)

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AU - Cho, M. H.

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