Temperature dependence of band alignments in ultrathin Hf-A1-O and Al 2O3 films on p-Si (100)

H. Jin, S. K. Oh, H. J. Kang, Y. S. Lee, M. H. Cho

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


Annealing temperature dependence of band alignments in Hf-Al-O and Al 2O3 thin films, grown on p-Si(100) by atomic layer deposition (ALD), has been studied by utilizing XPS and reflection electron energy loss spectroscopy (REELS). Band gaps and valence band offsets were estimated from the onset of REELS and valence band spectra of XPS, respectively. Hf-Al-O thin film is found to have asymmetric barrier heights for electrons and holes and reveals an increasing trend in the conduction band offsets after annealing treatment, while Al2O3 film shows a nearly symmetric band offsets.

Original languageEnglish
Pages (from-to)502-505
Number of pages4
JournalSurface and Interface Analysis
Issue number4
Publication statusPublished - 2006 Apr

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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