Temperature dependence of biexciton luminescence in cubic ZnS single crystals

N. Q. Liem; V. X. Quang; D. X. Thanh; J. I. Lee; D. Kim

doi:10.1016/S0038-1098(00)00454-3

Temperature dependence of biexciton luminescence in cubic ZnS single crystals

N. Q. Liem, V. X. Quang, D. X. Thanh, J. I. Lee, D. Kim

Department of Chemistry

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Temperature dependence of the excitonic and biexcitonic emissions in cubic ZnS single crystals has been studied by photoluminescence technique. We observed the very well-resolved excitonic and biexcitonic emissions from cubic ZnS single crystals with very low excitation density, in the tens-of-milliwatts-per-square-centimetre range. The kinetic energy contribution to the shift with temperature of the biexcitonic emission was determined showing a characteristic difference with the normal shift caused by the temperature-narrowed band gap.

Original language	English
Pages (from-to)	255-259
Number of pages	5
Journal	Solid State Communications
Volume	117
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1098(00)00454-3
Publication status	Published - 2001 Jan 8

Bibliographical note

Funding Information:
The authors thank Dr P.V. Phuc for his help in X-ray diffraction measurement, Profs L.V. Hong and P. Lavallard for helpful discussions. This work was partially supported by the Vietnam NCST and KOSEF.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Temperature dependence of biexciton luminescence in cubic ZnS single crystals",

abstract = "Temperature dependence of the excitonic and biexcitonic emissions in cubic ZnS single crystals has been studied by photoluminescence technique. We observed the very well-resolved excitonic and biexcitonic emissions from cubic ZnS single crystals with very low excitation density, in the tens-of-milliwatts-per-square-centimetre range. The kinetic energy contribution to the shift with temperature of the biexcitonic emission was determined showing a characteristic difference with the normal shift caused by the temperature-narrowed band gap.",

author = "Liem, {N. Q.} and Quang, {V. X.} and Thanh, {D. X.} and Lee, {J. I.} and D. Kim",

note = "Funding Information: The authors thank Dr P.V. Phuc for his help in X-ray diffraction measurement, Profs L.V. Hong and P. Lavallard for helpful discussions. This work was partially supported by the Vietnam NCST and KOSEF. ",

year = "2001",

month = jan,

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doi = "10.1016/S0038-1098(00)00454-3",

language = "English",

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T1 - Temperature dependence of biexciton luminescence in cubic ZnS single crystals

AU - Liem, N. Q.

AU - Quang, V. X.

AU - Thanh, D. X.

AU - Lee, J. I.

AU - Kim, D.

N1 - Funding Information: The authors thank Dr P.V. Phuc for his help in X-ray diffraction measurement, Profs L.V. Hong and P. Lavallard for helpful discussions. This work was partially supported by the Vietnam NCST and KOSEF.

PY - 2001/1/8

Y1 - 2001/1/8

N2 - Temperature dependence of the excitonic and biexcitonic emissions in cubic ZnS single crystals has been studied by photoluminescence technique. We observed the very well-resolved excitonic and biexcitonic emissions from cubic ZnS single crystals with very low excitation density, in the tens-of-milliwatts-per-square-centimetre range. The kinetic energy contribution to the shift with temperature of the biexcitonic emission was determined showing a characteristic difference with the normal shift caused by the temperature-narrowed band gap.

AB - Temperature dependence of the excitonic and biexcitonic emissions in cubic ZnS single crystals has been studied by photoluminescence technique. We observed the very well-resolved excitonic and biexcitonic emissions from cubic ZnS single crystals with very low excitation density, in the tens-of-milliwatts-per-square-centimetre range. The kinetic energy contribution to the shift with temperature of the biexcitonic emission was determined showing a characteristic difference with the normal shift caused by the temperature-narrowed band gap.

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