Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment

Moo Whan Shin, R. J. Trew, G. L. Bilbro, D. L. Dreifus, A. J. Tessmer

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.

Original languageEnglish
Pages (from-to)111-114
Number of pages4
JournalJournal of Materials Science: Materials in Electronics
Volume6
Issue number2
DOIs
Publication statusPublished - 1995 Apr 1

Fingerprint

Diamond
Current voltage characteristics
Field effect transistors
Diamonds
field effect transistors
diamonds
temperature dependence
electric potential
Pentodes
pentodes
Experiments
Crystalline materials
Triodes
Temperature
triodes
Silicon
simulators
Activation energy
Simulators
Doping (additives)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

@article{7c170b4d9978480492f6b3e25b7c7dac,
title = "Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs: modelling and experiment",
abstract = "For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.",
author = "Shin, {Moo Whan} and Trew, {R. J.} and Bilbro, {G. L.} and Dreifus, {D. L.} and Tessmer, {A. J.}",
year = "1995",
month = "4",
day = "1",
doi = "10.1007/BF00188194",
language = "English",
volume = "6",
pages = "111--114",
journal = "Journal of Materials Science: Materials in Electronics",
issn = "0957-4522",
publisher = "Springer New York",
number = "2",

}

Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs : modelling and experiment. / Shin, Moo Whan; Trew, R. J.; Bilbro, G. L.; Dreifus, D. L.; Tessmer, A. J.

In: Journal of Materials Science: Materials in Electronics, Vol. 6, No. 2, 01.04.1995, p. 111-114.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Temperature dependence of current-voltage characteristics of polycrystalline diamond FETs

T2 - modelling and experiment

AU - Shin, Moo Whan

AU - Trew, R. J.

AU - Bilbro, G. L.

AU - Dreifus, D. L.

AU - Tessmer, A. J.

PY - 1995/4/1

Y1 - 1995/4/1

N2 - For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.

AB - For the first time, a theoretical model for polycrystalline diamond (PCD) field effect transistors is proposed. The model is accompanied by an investigation of the single crystalline diamond (SCD) FET for the verification of material parameters employed in the simulation. The model runs on a device simulator, PISCES-IIB, and correctly accounts for the temperature-dependent shift of the I-V characteristics from pentode-like to triode-like behaviour as well as the temperature dependent pinch-off and saturation. Agreement between simulated and measured currents is obtained with a higher value of the activation energy for the dopant in PCD than in SCD, as has been reported for silicon.

UR - http://www.scopus.com/inward/record.url?scp=0029290279&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0029290279&partnerID=8YFLogxK

U2 - 10.1007/BF00188194

DO - 10.1007/BF00188194

M3 - Article

AN - SCOPUS:0029290279

VL - 6

SP - 111

EP - 114

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

SN - 0957-4522

IS - 2

ER -