Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

M. H. Cho; D. H. Ko; K. Jeong; I. W. Lyo; S. W. Whangbo; H. B. Kim; S. C. Choi; J. H. Song; S. J. Cho; C. N. Whang

doi:10.1063/1.370717

Temperature dependence of the properties of heteroepitaxial Y₂O₃ films grown on Si by ion assisted evaporation

M. H. Cho, D. H. Ko, K. Jeong, I. W. Lyo, S. W. Whangbo, H. B. Kim, S. C. Choi, J. H. Song, S. J. Cho, C. N. Whang

Research output: Contribution to journal › Article › peer-review

17 Citations (Scopus)

Abstract

The temperature dependence of the crystallinity, strain, and morphological characteristics of the epitaxial Y₂O₃ films grown on Si(111) by ion assisted evaporation is experimentally investigated. Each characteristic depends on a substrate temperature. In the temperature range 500-600 °C, the crystallinity was greatly improved, and the surface roughness was decreased drastically. On the other hand, in the temperature range 600-700 °C, the film was more compressed, and the density was increased. The crystallinity and the roughness at the interface region were worse than that at the surface region, so that the film stress existed mainly at the interface region.

Original language	English
Pages (from-to)	198-204
Number of pages	7
Journal	Journal of Applied Physics
Volume	86
Issue number	1
DOIs	https://doi.org/10.1063/1.370717
Publication status	Published - 1999 Jul

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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10.1063/1.370717

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@article{d37b0f2a7a9c43ddac54d506320be60e,

title = "Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation",

abstract = "The temperature dependence of the crystallinity, strain, and morphological characteristics of the epitaxial Y2O3 films grown on Si(111) by ion assisted evaporation is experimentally investigated. Each characteristic depends on a substrate temperature. In the temperature range 500-600 °C, the crystallinity was greatly improved, and the surface roughness was decreased drastically. On the other hand, in the temperature range 600-700 °C, the film was more compressed, and the density was increased. The crystallinity and the roughness at the interface region were worse than that at the surface region, so that the film stress existed mainly at the interface region.",

author = "Cho, {M. H.} and Ko, {D. H.} and K. Jeong and Lyo, {I. W.} and Whangbo, {S. W.} and Kim, {H. B.} and Choi, {S. C.} and Song, {J. H.} and Cho, {S. J.} and Whang, {C. N.}",

year = "1999",

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doi = "10.1063/1.370717",

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volume = "86",

pages = "198--204",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "1",

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Temperature dependence of the properties of heteroepitaxial Y₂O₃ films grown on Si by ion assisted evaporation. / Cho, M. H.; Ko, D. H.; Jeong, K.; Lyo, I. W.; Whangbo, S. W.; Kim, H. B.; Choi, S. C.; Song, J. H.; Cho, S. J.; Whang, C. N.

In: Journal of Applied Physics, Vol. 86, No. 1, 07.1999, p. 198-204.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Temperature dependence of the properties of heteroepitaxial Y2O3 films grown on Si by ion assisted evaporation

AU - Cho, M. H.

AU - Ko, D. H.

AU - Jeong, K.

AU - Lyo, I. W.

AU - Whangbo, S. W.

AU - Kim, H. B.

AU - Choi, S. C.

AU - Song, J. H.

AU - Cho, S. J.

AU - Whang, C. N.

PY - 1999/7

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N2 - The temperature dependence of the crystallinity, strain, and morphological characteristics of the epitaxial Y2O3 films grown on Si(111) by ion assisted evaporation is experimentally investigated. Each characteristic depends on a substrate temperature. In the temperature range 500-600 °C, the crystallinity was greatly improved, and the surface roughness was decreased drastically. On the other hand, in the temperature range 600-700 °C, the film was more compressed, and the density was increased. The crystallinity and the roughness at the interface region were worse than that at the surface region, so that the film stress existed mainly at the interface region.

AB - The temperature dependence of the crystallinity, strain, and morphological characteristics of the epitaxial Y2O3 films grown on Si(111) by ion assisted evaporation is experimentally investigated. Each characteristic depends on a substrate temperature. In the temperature range 500-600 °C, the crystallinity was greatly improved, and the surface roughness was decreased drastically. On the other hand, in the temperature range 600-700 °C, the film was more compressed, and the density was increased. The crystallinity and the roughness at the interface region were worse than that at the surface region, so that the film stress existed mainly at the interface region.

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