Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots

K. Kim, T. B. Norris, S. Ghosh, J. Singh, P. Bhattacharya

Research output: Contribution to conference › Paper

Abstract

Femtosecond spectroscopy is used to study the transparency conditions in In0.04Ga0.6As self-organized quantum dots. The spatial degeneracy(2) of excited state is experimentally observed and a multilevel model is shown to be consistent with the temperature-dependent behavior.

Original languageEnglish
PagesQThI6/1-QThI6/2
Publication statusPublished - 2003 Dec 1
EventTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS) - Baltimore, MD., United States
Duration: 2003 Jun 1 → 2003 Jun 6

Other

OtherTrends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS)
CountryUnited States
CityBaltimore, MD.
Period03/6/1 → 03/6/6

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quantum dots
spectroscopy
excitation
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Kim, K., Norris, T. B., Ghosh, S., Singh, J., & Bhattacharya, P. (2003). Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots. QThI6/1-QThI6/2. Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.
Kim, K. ; Norris, T. B. ; Ghosh, S. ; Singh, J. ; Bhattacharya, P. / Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots. Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.
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Kim, K, Norris, TB, Ghosh, S, Singh, J & Bhattacharya, P 2003, 'Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots', Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States, 03/6/1 - 03/6/6 pp. QThI6/1-QThI6/2.

Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots. / Kim, K.; Norris, T. B.; Ghosh, S.; Singh, J.; Bhattacharya, P.

2003. QThI6/1-QThI6/2 Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.

Research output: Contribution to conference › Paper

TY - CONF

T1 - Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots

AU - Kim, K.

AU - Norris, T. B.

AU - Ghosh, S.

AU - Singh, J.

AU - Bhattacharya, P.

PY - 2003/12/1

Y1 - 2003/12/1

N2 - Femtosecond spectroscopy is used to study the transparency conditions in In0.04Ga0.6As self-organized quantum dots. The spatial degeneracy(2) of excited state is experimentally observed and a multilevel model is shown to be consistent with the temperature-dependent behavior.

AB - Femtosecond spectroscopy is used to study the transparency conditions in In0.04Ga0.6As self-organized quantum dots. The spatial degeneracy(2) of excited state is experimentally observed and a multilevel model is shown to be consistent with the temperature-dependent behavior.

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Kim K, Norris TB, Ghosh S, Singh J, Bhattacharya P. Temperature-dependent carrier distributions and level degeneracy in self-assembled quantum dots. 2003. Paper presented at Trends in Optics and Photonics Series: Quantum electronics and Laser Science (QELS), Baltimore, MD., United States.

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