Temperature-dependent gain variation reduction in C-band erbium-doped fiber amplifier using phosphorus-erbium-doped silica fiber

Young Eun Im, Seung Ryong Han, Chang Soo Park, Kyunghwan Oh

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Abstract-We propose a new technique to reduce the temperature-dependent gain (TDG) tilt of erbium-doped fiber amplifier in the C-band by supplying a composite optical gain block, conventional aluminum-rich erbium-doped fiber (EDF) serially concatenated with a special EDF composed of phosphorus-doped silica host, which showed opposite TDG coefficients in the C-band. The TDG variation was suppressed to less than ±0.45 dB for the saturated gain of 16 dB in 1525-1565 nm, within the temperature range of -40°C to +80 °C.

Original languageEnglish
Pages (from-to)2087-2089
Number of pages3
JournalIEEE Photonics Technology Letters
Volume18
Issue number20
DOIs
Publication statusPublished - 2006 Oct 15

Fingerprint

Erbium
Erbium doped fiber amplifiers
C band
Silicon Dioxide
erbium
Phosphorus
phosphorus
amplifiers
Silica
silicon dioxide
fibers
Fibers
Optical gain
Temperature
temperature
Aluminum
supplying
Composite materials
aluminum
composite materials

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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Temperature-dependent gain variation reduction in C-band erbium-doped fiber amplifier using phosphorus-erbium-doped silica fiber. / Im, Young Eun; Han, Seung Ryong; Park, Chang Soo; Oh, Kyunghwan.

In: IEEE Photonics Technology Letters, Vol. 18, No. 20, 15.10.2006, p. 2087-2089.

Research output: Contribution to journalArticle

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AU - Oh, Kyunghwan

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