Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots

Y. G. Kim; K. S. Baek; S. K. Chang

doi:10.1016/j.ssc.2009.03.026

Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots

Y. G. Kim, K. S. Baek, S. K. Chang

Department of Physics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H₂-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.

Original language	English
Pages (from-to)	937-940
Number of pages	4
Journal	Solid State Communications
Volume	149
Issue number	23-24
DOIs	https://doi.org/10.1016/j.ssc.2009.03.026
Publication status	Published - 2009 Jun

Bibliographical note

Funding Information:
This work was supported by grant No. R01-2006-000-10330-0 from the Basic Research Program of the Korea Science & Engineering Foundation.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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title = "Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots",

abstract = "Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.",

author = "Kim, {Y. G.} and Baek, {K. S.} and Chang, {S. K.}",

note = "Funding Information: This work was supported by grant No. R01-2006-000-10330-0 from the Basic Research Program of the Korea Science & Engineering Foundation.",

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doi = "10.1016/j.ssc.2009.03.026",

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T1 - Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots

AU - Kim, Y. G.

AU - Baek, K. S.

AU - Chang, S. K.

N1 - Funding Information: This work was supported by grant No. R01-2006-000-10330-0 from the Basic Research Program of the Korea Science & Engineering Foundation.

PY - 2009/6

Y1 - 2009/6

N2 - Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.

AB - Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.

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JF - Solid State Communications

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Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

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