Abstract
Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.
| Original language | English |
|---|---|
| Pages (from-to) | 937-940 |
| Number of pages | 4 |
| Journal | Solid State Communications |
| Volume | 149 |
| Issue number | 23-24 |
| DOIs | |
| Publication status | Published - 2009 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Materials Chemistry
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Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots. / Kim, Y. G.; Baek, K. S.; Chang, S. K.
In: Solid State Communications, Vol. 149, No. 23-24, 01.06.2009, p. 937-940.Research output: Contribution to journal › Article
TY - JOUR
T1 - Temperature-dependent photoluminescence of dimethylzinc-treated ZnSe/ZnS quantum dots
AU - Kim, Y. G.
AU - Baek, K. S.
AU - Chang, S. K.
PY - 2009/6/1
Y1 - 2009/6/1
N2 - Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.
AB - Temperature-dependent photoluminescence (PL) measurements were carried out ZnSe/ZnS quantum dots (QDs) grown with post-growth interruption under a dimethylzinc (DMZn) flow. The PL spectra showed sigmoidal peak shifts and V-shaped full width at half maximum (FWHM) variations with increasing temperature, which strongly suggest that the QD structure of ZnSe/ZnS is quite similar to that of other material systems grown in the Stranski-Krastanov mode. Apparent differences are revealed as a consequence of DMZn treatment: (i) the PL spectra of ZnSe/ZnS QDs showed peaks at higher energies and persisted up to 300 K, and(ii) the minimum points of the V-shaped FWHM appear at a higher temperature compared to H2-purged ZnSe/ZnS QDs. Experimental results demonstrate the enhancement of localization energy.
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U2 - 10.1016/j.ssc.2009.03.026
DO - 10.1016/j.ssc.2009.03.026
M3 - Article
AN - SCOPUS:65449181637
VL - 149
SP - 937
EP - 940
JO - Solid State Communications
JF - Solid State Communications
SN - 0038-1098
IS - 23-24
ER -