Temperature-modulated Si(001):As gas-source molecular beam epitaxy

Growth kinetics and As incorporation

Hyungjun Kim, G. Glass, J. A.N.T. Soares, Y. L. Foo, P. Desjardins, J. E. Greene

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Arsenic doping at concentrations CAs ≳ 1018 cm-3 during Si(001) growth from hydride precursors gives rise to strong As surface segregation, low film growth rates RSi, poor electrical activation, and surface roughening. Based upon the results of temperature-programmed desorption studies of Si(001):As surface processes during film deposition, we have investigated the use of temperature-modulated growth including periodic arsenic desorption (10 s at 1000 °C) from the surface segregated layer. Both constant-temperature and temperature-modulated Si(001):As layers were grown at Ts=750 °C, selected as a compromise between maximizing CAs and providing a usable deposition rate, by gas-source molecular beam epitaxy from Si2H6/AsH3 mixtures. For constant-temperature growth, RSi is only 0.08 μmh-1, the fraction of electrically active dopant is 55%, and film surfaces are very rough (rms roughness 〈w〉 = 110 A°). In sharp contrast, Ts-inodulated layers exhibit increases in RSi by 2.5× to 0.20 μm h-1, 100% electrical activity, and atomically smooth surfaces with 〈w〉 = 2 Å. The results are explained based upon the competition among As surface segregation, desorption, and incorporation rates.

Original languageEnglish
Pages (from-to)3263-3265
Number of pages3
JournalApplied Physics Letters
Volume79
Issue number20
DOIs
Publication statusPublished - 2001 Nov 12

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molecular beam epitaxy
kinetics
gases
desorption
arsenic
temperature
hydrides
surface layers
roughness
activation

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Hyungjun ; Glass, G. ; Soares, J. A.N.T. ; Foo, Y. L. ; Desjardins, P. ; Greene, J. E. / Temperature-modulated Si(001):As gas-source molecular beam epitaxy : Growth kinetics and As incorporation. In: Applied Physics Letters. 2001 ; Vol. 79, No. 20. pp. 3263-3265.
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abstract = "Arsenic doping at concentrations CAs ≳ 1018 cm-3 during Si(001) growth from hydride precursors gives rise to strong As surface segregation, low film growth rates RSi, poor electrical activation, and surface roughening. Based upon the results of temperature-programmed desorption studies of Si(001):As surface processes during film deposition, we have investigated the use of temperature-modulated growth including periodic arsenic desorption (10 s at 1000 °C) from the surface segregated layer. Both constant-temperature and temperature-modulated Si(001):As layers were grown at Ts=750 °C, selected as a compromise between maximizing CAs and providing a usable deposition rate, by gas-source molecular beam epitaxy from Si2H6/AsH3 mixtures. For constant-temperature growth, RSi is only 0.08 μmh-1, the fraction of electrically active dopant is 55{\%}, and film surfaces are very rough (rms roughness 〈w〉 = 110 A°). In sharp contrast, Ts-inodulated layers exhibit increases in RSi by 2.5× to 0.20 μm h-1, 100{\%} electrical activity, and atomically smooth surfaces with 〈w〉 = 2 {\AA}. The results are explained based upon the competition among As surface segregation, desorption, and incorporation rates.",
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Temperature-modulated Si(001):As gas-source molecular beam epitaxy : Growth kinetics and As incorporation. / Kim, Hyungjun; Glass, G.; Soares, J. A.N.T.; Foo, Y. L.; Desjardins, P.; Greene, J. E.

In: Applied Physics Letters, Vol. 79, No. 20, 12.11.2001, p. 3263-3265.

Research output: Contribution to journalArticle

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AU - Kim, Hyungjun

AU - Glass, G.

AU - Soares, J. A.N.T.

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