Abstract
Light-matter interaction in two-dimensional Dirac materials exhibits intriguing features in comparison to conventional semiconductors. Recent discoveries of graphene and three-dimensional topological insulators (TIs) have demonstrated novel terahertz (THz) optoelectronics, such that control over the electronic properties of Dirac-type carriers can be conducted by optical techniques. In this paper, we review recent investigations of graphene and TIs using broadband THz radiation and ultrashort optical pulses. After discussing state-of-the-art progress in graphene and TI investigations (Sec. I), we present ultrafast optical techniques that employ optical-pump THz-probe spectroscopy (Sec. II). In Sec. III, broadband THz responses in Dirac materials are examined according to semi-classical theories, and corresponding physical rationales are extended to elucidate Dirac plasmons in graphene and TIs (Sec. IV). Finally, brief summaries with research outlooks for future THz applications of graphene and TIs are provided (Sec. V).
| Original language | English |
|---|---|
| Pages (from-to) | 1484-1490 |
| Number of pages | 7 |
| Journal | Journal of the Korean Physical Society |
| Volume | 72 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2018 Jun 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
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Terahertz Investigation of Dirac Materials : Graphene and Topological Insulators. / In, Chihun; Choi, Hyunyong.
In: Journal of the Korean Physical Society, Vol. 72, No. 12, 01.06.2018, p. 1484-1490.Research output: Contribution to journal › Review article
TY - JOUR
T1 - Terahertz Investigation of Dirac Materials
T2 - Graphene and Topological Insulators
AU - In, Chihun
AU - Choi, Hyunyong
PY - 2018/6/1
Y1 - 2018/6/1
N2 - Light-matter interaction in two-dimensional Dirac materials exhibits intriguing features in comparison to conventional semiconductors. Recent discoveries of graphene and three-dimensional topological insulators (TIs) have demonstrated novel terahertz (THz) optoelectronics, such that control over the electronic properties of Dirac-type carriers can be conducted by optical techniques. In this paper, we review recent investigations of graphene and TIs using broadband THz radiation and ultrashort optical pulses. After discussing state-of-the-art progress in graphene and TI investigations (Sec. I), we present ultrafast optical techniques that employ optical-pump THz-probe spectroscopy (Sec. II). In Sec. III, broadband THz responses in Dirac materials are examined according to semi-classical theories, and corresponding physical rationales are extended to elucidate Dirac plasmons in graphene and TIs (Sec. IV). Finally, brief summaries with research outlooks for future THz applications of graphene and TIs are provided (Sec. V).
AB - Light-matter interaction in two-dimensional Dirac materials exhibits intriguing features in comparison to conventional semiconductors. Recent discoveries of graphene and three-dimensional topological insulators (TIs) have demonstrated novel terahertz (THz) optoelectronics, such that control over the electronic properties of Dirac-type carriers can be conducted by optical techniques. In this paper, we review recent investigations of graphene and TIs using broadband THz radiation and ultrashort optical pulses. After discussing state-of-the-art progress in graphene and TI investigations (Sec. I), we present ultrafast optical techniques that employ optical-pump THz-probe spectroscopy (Sec. II). In Sec. III, broadband THz responses in Dirac materials are examined according to semi-classical theories, and corresponding physical rationales are extended to elucidate Dirac plasmons in graphene and TIs (Sec. IV). Finally, brief summaries with research outlooks for future THz applications of graphene and TIs are provided (Sec. V).
UR - http://www.scopus.com/inward/record.url?scp=85049150271&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85049150271&partnerID=8YFLogxK
U2 - 10.3938/jkps.72.1484
DO - 10.3938/jkps.72.1484
M3 - Review article
AN - SCOPUS:85049150271
VL - 72
SP - 1484
EP - 1490
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 12
ER -