Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements

Sang Yub Ie, Byung Tack Bea, Young Kun Ahn, M. Y. Chang, D. G. You, Mann-Ho Cho, KwangHo Jeong, Jae Hee Oh, Gwan Hyeob Koh, Hongsik Jeong

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

The preferred oriented texture Ge2Sb2Te5 (GST) thin film was prepared on SiO2/Si(001) and TiN(60 nm.)/Si(001) substrates. With the modulated layers of each constituent materials, the stoichiometry of thin film was controlled. Through cross section transmission electron microscope analysis and the x-ray diffraction (XRD) measurement at different temperatures, the evolutions of as-grown multilayer from amorphous to textured crystalline state were studied. Highly preferred orientation to 〈00l〉) direction of GST film was verified by XRD pole figure measurements to deduce the orientation distribution function. From, these results, the authors could suggest the effective synthetic method to make the texture GST film, with high crystalline quality.

Original languageEnglish
Article number251917
JournalApplied Physics Letters
Volume90
Issue number25
DOIs
Publication statusPublished - 2007 Aug 2

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x ray diffraction
textures
thin films
stoichiometry
poles
electron microscopes
distribution functions
cross sections
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ie, Sang Yub ; Bea, Byung Tack ; Ahn, Young Kun ; Chang, M. Y. ; You, D. G. ; Cho, Mann-Ho ; Jeong, KwangHo ; Oh, Jae Hee ; Koh, Gwan Hyeob ; Jeong, Hongsik. / Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements. In: Applied Physics Letters. 2007 ; Vol. 90, No. 25.
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abstract = "The preferred oriented texture Ge2Sb2Te5 (GST) thin film was prepared on SiO2/Si(001) and TiN(60 nm.)/Si(001) substrates. With the modulated layers of each constituent materials, the stoichiometry of thin film was controlled. Through cross section transmission electron microscope analysis and the x-ray diffraction (XRD) measurement at different temperatures, the evolutions of as-grown multilayer from amorphous to textured crystalline state were studied. Highly preferred orientation to 〈00l〉) direction of GST film was verified by XRD pole figure measurements to deduce the orientation distribution function. From, these results, the authors could suggest the effective synthetic method to make the texture GST film, with high crystalline quality.",
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Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements. / Ie, Sang Yub; Bea, Byung Tack; Ahn, Young Kun; Chang, M. Y.; You, D. G.; Cho, Mann-Ho; Jeong, KwangHo; Oh, Jae Hee; Koh, Gwan Hyeob; Jeong, Hongsik.

In: Applied Physics Letters, Vol. 90, No. 25, 251917, 02.08.2007.

Research output: Contribution to journalArticle

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T1 - Texture formation of GeSbTe thin films prepared by multilayer deposition of modulating constituent elements

AU - Ie, Sang Yub

AU - Bea, Byung Tack

AU - Ahn, Young Kun

AU - Chang, M. Y.

AU - You, D. G.

AU - Cho, Mann-Ho

AU - Jeong, KwangHo

AU - Oh, Jae Hee

AU - Koh, Gwan Hyeob

AU - Jeong, Hongsik

PY - 2007/8/2

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AB - The preferred oriented texture Ge2Sb2Te5 (GST) thin film was prepared on SiO2/Si(001) and TiN(60 nm.)/Si(001) substrates. With the modulated layers of each constituent materials, the stoichiometry of thin film was controlled. Through cross section transmission electron microscope analysis and the x-ray diffraction (XRD) measurement at different temperatures, the evolutions of as-grown multilayer from amorphous to textured crystalline state were studied. Highly preferred orientation to 〈00l〉) direction of GST film was verified by XRD pole figure measurements to deduce the orientation distribution function. From, these results, the authors could suggest the effective synthetic method to make the texture GST film, with high crystalline quality.

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