The ageing mechanism of high-power InGaN/GaN light-emitting diodes under electrical stresses

Jianzheng Hu, Lianqiao Yang, Lan Kim, Moo Whan Shin

Research output: Contribution to journalArticle

24 Citations (Scopus)

Abstract

Degrading characteristics of InGaN/GaN-based blue light-emitting diodes (LEDs) in the optical increase stage (stage I) were investigated. The LEDs were under an ageing with dc current of different levels. Different ageing phenomena were observed for both the electrical and the optical characteristics. The tunnelling components of the forward current were found to change with different trends for the samples aged under current stresses of 100 mA and 1000 mA, respectively. The former decreased monotonically, while the latter decreased in the early period, and then kept increasing. Different ageing rates but the same trends were observed for the optical degradation of the samples aged under different stresses. The ageing factors induced by the dopant activation and the change of defects competed with each other in the ageing process and were proposed to be responsible for the ageing characteristics.

Original languageEnglish
Pages (from-to)1249-1252
Number of pages4
JournalSemiconductor Science and Technology
Volume22
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

Fingerprint

Light emitting diodes
light emitting diodes
Aging of materials
trends
Chemical activation
Doping (additives)
activation
degradation
Degradation
Defects
defects

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "Degrading characteristics of InGaN/GaN-based blue light-emitting diodes (LEDs) in the optical increase stage (stage I) were investigated. The LEDs were under an ageing with dc current of different levels. Different ageing phenomena were observed for both the electrical and the optical characteristics. The tunnelling components of the forward current were found to change with different trends for the samples aged under current stresses of 100 mA and 1000 mA, respectively. The former decreased monotonically, while the latter decreased in the early period, and then kept increasing. Different ageing rates but the same trends were observed for the optical degradation of the samples aged under different stresses. The ageing factors induced by the dopant activation and the change of defects competed with each other in the ageing process and were proposed to be responsible for the ageing characteristics.",
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The ageing mechanism of high-power InGaN/GaN light-emitting diodes under electrical stresses. / Hu, Jianzheng; Yang, Lianqiao; Kim, Lan; Shin, Moo Whan.

In: Semiconductor Science and Technology, Vol. 22, No. 12, 01.12.2007, p. 1249-1252.

Research output: Contribution to journalArticle

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