The application of atomic layer deposition for low dimensional nanomaterial synthesis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Atomic layer deposition (ALD) has been considered as a promising thin film deposition technique for nanoscale semiconductor device fabrication. Recently, however, the exclusive benefits of ALD make it viable tool for nanotechnology. In this presentation, I will present several examples on the application of ALD for low dimensional nanomaterial synthesis. Due to its excellent conformality, ALD is an ideal technique to produce nanomaterials with combination of nanopatterning techniques. Utilizing highly conformai ZnO ALD on the nanohole arrays made by anodized aluminum oxide nanotemplates, low dimensional nanostructures were fabricated and applied for the fabrication of high performance gas sensor. Also, using highly conformai transition metal ALD processes followed by annealing, silicide nanowires were synthesized. Moreover, by adding SiH 4 to the NH 3 plasma reactant during Co plasma-enhanced ALD process, Co nanorod array was formed on Si substrates without using nanotemplates.

Original languageEnglish
Title of host publicationLow-Dimensional Nanoscale Electronic and Photonic Devices 4
Pages57-63
Number of pages7
Edition9
DOIs
Publication statusPublished - 2010 Dec 1
EventLow-Dimensional Nanoscale Electronic and Photonic Devices 4 - 218th ECS Meeting - Las Vegas, NV, United States
Duration: 2010 Oct 102010 Oct 15

Publication series

NameECS Transactions
Number9
Volume33
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherLow-Dimensional Nanoscale Electronic and Photonic Devices 4 - 218th ECS Meeting
CountryUnited States
CityLas Vegas, NV
Period10/10/1010/10/15

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Kim, H. (2010). The application of atomic layer deposition for low dimensional nanomaterial synthesis. In Low-Dimensional Nanoscale Electronic and Photonic Devices 4 (9 ed., pp. 57-63). (ECS Transactions; Vol. 33, No. 9). https://doi.org/10.1149/1.3193683