Flip chip bonding technique using Pb/In solder bumps was applied to packaging of a 10 Gbps laser diode (LD) submodule for high speed optical communication systems. The effect of the flip-chip bonding interconnection technique instead of conventional wire bonding was investigated for high speed broad band devices. The broad band performance of 10 Gbps LD submodule was simulated using SPICE S/W and compared with experimental results. In this simulation, the 10 Gbps LD was modeled in a parallel RC circuit. The values of R and C used for the equivalent circuit were 5Ω and 1 pF, respectively. The LD was placed in series with a 18Ω thin film resistor to prevent the impedance mismatch between the LD and a 25Ω transmission line. The dependence of parasitic parameters on the small signal modulation bandwidth and the scattering parameters of the LD submodule was investigated and analyzed up to 20 GHz. A small signal modulation bandwidth of 14 GHz at 10 mA dc bias current and the clean modulation response up to 20 GHz were found for the flip-chip bonded submodule. The bandwidth of flip-chip bonded 10 Gbps LD submodule is wider than that of the wire-bonded LD submodule by a difference of 3.8 GHz.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry