The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

J. Y. Kim, C. S. Lee, S. E. Kim, I. B. Chung, Y. M. Choi, B. J. Park, J. W. Lee, D. I. Kim, Y. S. Hwang, D. S. Hwang, H. K. Hwang, J. M. Park, D. H. Kim, N. J. Kang, M. H. Cho, M. Y. Jeong, H. J. Kim, J. N. Han, S. Y. Kim, B. Y. NamH. S. Park, S. H. Chung, J. H. Lee, J. S. Park, H. S. Kim, Y. J. Park, Kinam Kim

Research output: Contribution to journal › Conference article › peer-review

79 Citations (Scopus)

Fingerprint

Dive into the research topics of 'The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond'. Together they form a unique fingerprint.

Engineering & Materials Science