The Breakthrough in data retention time of DRAM using Recess-Channel-Array Transistor(RCAT) for 88 nm feature size and beyond

J. Y. Kim, C. S. Lee, S. E. Kim, I. B. Chung, Y. M. Choi, B. J. Park, J. W. Lee, D. I. Kim, Y. S. Hwang, D. S. Hwang, H. K. Hwang, J. M. Park, D. H. Kim, N. J. Kang, M. H. Cho, M. Y. Jeong, H. J. Kim, J. N. Han, S. Y. Kim, B. Y. NamH. S. Park, S. H. Chung, J. H. Lee, J. S. Park, H. S. Kim, Y. J. Park, Kinam Kim

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Engineering & Materials Science