The C 2 H 2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film

Sung Hyuk Cho, Young Jin Lee, Doo Jin Choi, Tae Song Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C 2 H 2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C 2 H 2 flow rate changes. The C 2 H 2 played an important role in the transition between sp 2 and sp 3 carbon hybridization bonds, which affected the growth behavior and properties of the films.

Original languageEnglish
Pages (from-to)811-816
Number of pages6
JournalJournal of Electroceramics
Volume17
Issue number2-4
DOIs
Publication statusPublished - 2006 Dec 1

Fingerprint

Plasma enhanced chemical vapor deposition
Gases
vapor deposition
gases
Carbon
flow velocity
Flow rate
carbon
Auger electron spectroscopy
Stoichiometry
Auger spectroscopy
electron spectroscopy
stoichiometry
Plasmas
Substrates
profiles
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Ceramics and Composites
  • Condensed Matter Physics
  • Mechanics of Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Cho, Sung Hyuk ; Lee, Young Jin ; Choi, Doo Jin ; Kim, Tae Song. / The C 2 H 2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film In: Journal of Electroceramics. 2006 ; Vol. 17, No. 2-4. pp. 811-816.
@article{65b086638bb74c9e93cbafc48ee7f2aa,
title = "The C 2 H 2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film",
abstract = "SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C 2 H 2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C 2 H 2 flow rate changes. The C 2 H 2 played an important role in the transition between sp 2 and sp 3 carbon hybridization bonds, which affected the growth behavior and properties of the films.",
author = "Cho, {Sung Hyuk} and Lee, {Young Jin} and Choi, {Doo Jin} and Kim, {Tae Song}",
year = "2006",
month = "12",
day = "1",
doi = "10.1007/s10832-006-9437-8",
language = "English",
volume = "17",
pages = "811--816",
journal = "Journal of Electroceramics",
issn = "1385-3449",
publisher = "Springer Netherlands",
number = "2-4",

}

The C 2 H 2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film . / Cho, Sung Hyuk; Lee, Young Jin; Choi, Doo Jin; Kim, Tae Song.

In: Journal of Electroceramics, Vol. 17, No. 2-4, 01.12.2006, p. 811-816.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The C 2 H 2 gas effect on the growth behavior of remote plasma enhanced CVD SiC:H film

AU - Cho, Sung Hyuk

AU - Lee, Young Jin

AU - Choi, Doo Jin

AU - Kim, Tae Song

PY - 2006/12/1

Y1 - 2006/12/1

N2 - SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C 2 H 2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C 2 H 2 flow rate changes. The C 2 H 2 played an important role in the transition between sp 2 and sp 3 carbon hybridization bonds, which affected the growth behavior and properties of the films.

AB - SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C 2 H 2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C 2 H 2 flow rate changes. The C 2 H 2 played an important role in the transition between sp 2 and sp 3 carbon hybridization bonds, which affected the growth behavior and properties of the films.

UR - http://www.scopus.com/inward/record.url?scp=33847207200&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847207200&partnerID=8YFLogxK

U2 - 10.1007/s10832-006-9437-8

DO - 10.1007/s10832-006-9437-8

M3 - Article

AN - SCOPUS:33847207200

VL - 17

SP - 811

EP - 816

JO - Journal of Electroceramics

JF - Journal of Electroceramics

SN - 1385-3449

IS - 2-4

ER -