SiC:H films were produced in a remote plasma enhanced chemical vapor deposition (RPE-CVD) system. The HMDS was chosen as the primary source gas and was fixed at constant flow rate of 10 sccm. The C2H2 gas input amount was varied from 3 to 200 sccm for the study of carbon effect on the film stoichiometry and bonding properties. The deposition temperature of the substrate was fixed at 400°C, and the plasma power was fixed at 300 W. Using auger electron spectroscopy, the depth profile of the film was investigated with C2H2 flow rate changes. The C2H 2 played an important role in the transition between sp2 and sp3 carbon hybridization bonds, which affected the growth behavior and properties of the films.
Bibliographical noteFunding Information:
Acknowledgment This research was supported by the Intelligent Mic-rosystem Center (IMC; http://www.microsystem.re.kr), the first launched center of 21st Century Frontier R&D Program sponsored by Korean Ministry of Science and Technology.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Ceramics and Composites
- Condensed Matter Physics
- Mechanics of Materials
- Electrical and Electronic Engineering
- Materials Chemistry