The challenges and progress of USJ formation & process integration for 32nm technology and beyond

Hsing Huang Tseng, Pankaj Kalra, Jungwoo Oh, Prashant Majhi, Tsu Jae King Liu, Raj Jammy

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Future devices will be fabricated with high-k/metal gate stack and possibly employ high mobility channel materials. Ultra shallow junction (USJ) research targeted for devices scaled to 32nm and beyond should address the compatibility with the advanced gate stack and new channel materials. This paper discusses recent progress in USJ formation targeted for future Si and Ge channel devices. Challenges of USJ module for scaled CMOS technologies will be highlighted.

Original languageEnglish
Title of host publicationIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
Pages3-6
Number of pages4
DOIs
Publication statusPublished - 2008
EventIWJT-2008 - International Workshop on Junction Technology - Shanghai, China
Duration: 2008 May 152008 May 16

Publication series

NameIWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology

Other

OtherIWJT-2008 - International Workshop on Junction Technology
CountryChina
CityShanghai
Period08/5/1508/5/16

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture
  • Electrical and Electronic Engineering

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    Tseng, H. H., Kalra, P., Oh, J., Majhi, P., Liu, T. J. K., & Jammy, R. (2008). The challenges and progress of USJ formation & process integration for 32nm technology and beyond. In IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology (pp. 3-6). [4540005] (IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology). https://doi.org/10.1109/IWJT.2008.4540005