TY - GEN
T1 - The challenges and progress of USJ formation & process integration for 32nm technology and beyond
AU - Tseng, Hsing Huang
AU - Kalra, Pankaj
AU - Oh, Jungwoo
AU - Majhi, Prashant
AU - Liu, Tsu Jae King
AU - Jammy, Raj
PY - 2008
Y1 - 2008
N2 - Future devices will be fabricated with high-k/metal gate stack and possibly employ high mobility channel materials. Ultra shallow junction (USJ) research targeted for devices scaled to 32nm and beyond should address the compatibility with the advanced gate stack and new channel materials. This paper discusses recent progress in USJ formation targeted for future Si and Ge channel devices. Challenges of USJ module for scaled CMOS technologies will be highlighted.
AB - Future devices will be fabricated with high-k/metal gate stack and possibly employ high mobility channel materials. Ultra shallow junction (USJ) research targeted for devices scaled to 32nm and beyond should address the compatibility with the advanced gate stack and new channel materials. This paper discusses recent progress in USJ formation targeted for future Si and Ge channel devices. Challenges of USJ module for scaled CMOS technologies will be highlighted.
UR - http://www.scopus.com/inward/record.url?scp=50849139894&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=50849139894&partnerID=8YFLogxK
U2 - 10.1109/IWJT.2008.4540005
DO - 10.1109/IWJT.2008.4540005
M3 - Conference contribution
AN - SCOPUS:50849139894
SN - 9781424417384
T3 - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
SP - 3
EP - 6
BT - IWJT-2008 - Extended Abstracts 2008 International Workshop on Junction Technology
T2 - IWJT-2008 - International Workshop on Junction Technology
Y2 - 15 May 2008 through 16 May 2008
ER -