The challenges in guided self-assembly of Ge and InAs quantum dots on Si

Z. M. Zhao, T. S. Yoon, W. Feng, B. Y. Li, J. H. Kim, J. Liu, O. Hulko, Y. H. Xie, H. M. Kim, K. B. Kim, H. J. Kim, K. L. Wang, C. Ratsch, R. Caflisch, Du Yeol Ryu, T. P. Russell

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The topic of guided self-assembly of Ge and InAs quantum dots on Si (001) substrates via epitaxy is discussed. A buried misfit dislocation network can be used to guide the assembly process through the associated strain field. Patterned substrates can also be used to guide the assembly process. This paper discusses the recent experimental and theoretical studies of the guided assembly process with an emphasis on what remains to be understood.

Original languageEnglish
Pages (from-to)195-199
Number of pages5
JournalThin Solid Films
Volume508
Issue number1-2
DOIs
Publication statusPublished - 2006 Jun 5

Fingerprint

Self assembly
Semiconductor quantum dots
self assembly
assembly
quantum dots
Substrates
Dislocations (crystals)
Epitaxial growth
epitaxy
indium arsenide

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Zhao, Z. M., Yoon, T. S., Feng, W., Li, B. Y., Kim, J. H., Liu, J., ... Russell, T. P. (2006). The challenges in guided self-assembly of Ge and InAs quantum dots on Si. Thin Solid Films, 508(1-2), 195-199. https://doi.org/10.1016/j.tsf.2005.08.407
Zhao, Z. M. ; Yoon, T. S. ; Feng, W. ; Li, B. Y. ; Kim, J. H. ; Liu, J. ; Hulko, O. ; Xie, Y. H. ; Kim, H. M. ; Kim, K. B. ; Kim, H. J. ; Wang, K. L. ; Ratsch, C. ; Caflisch, R. ; Ryu, Du Yeol ; Russell, T. P. / The challenges in guided self-assembly of Ge and InAs quantum dots on Si. In: Thin Solid Films. 2006 ; Vol. 508, No. 1-2. pp. 195-199.
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Zhao, ZM, Yoon, TS, Feng, W, Li, BY, Kim, JH, Liu, J, Hulko, O, Xie, YH, Kim, HM, Kim, KB, Kim, HJ, Wang, KL, Ratsch, C, Caflisch, R, Ryu, DY & Russell, TP 2006, 'The challenges in guided self-assembly of Ge and InAs quantum dots on Si', Thin Solid Films, vol. 508, no. 1-2, pp. 195-199. https://doi.org/10.1016/j.tsf.2005.08.407

The challenges in guided self-assembly of Ge and InAs quantum dots on Si. / Zhao, Z. M.; Yoon, T. S.; Feng, W.; Li, B. Y.; Kim, J. H.; Liu, J.; Hulko, O.; Xie, Y. H.; Kim, H. M.; Kim, K. B.; Kim, H. J.; Wang, K. L.; Ratsch, C.; Caflisch, R.; Ryu, Du Yeol; Russell, T. P.

In: Thin Solid Films, Vol. 508, No. 1-2, 05.06.2006, p. 195-199.

Research output: Contribution to journalArticle

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Zhao ZM, Yoon TS, Feng W, Li BY, Kim JH, Liu J et al. The challenges in guided self-assembly of Ge and InAs quantum dots on Si. Thin Solid Films. 2006 Jun 5;508(1-2):195-199. https://doi.org/10.1016/j.tsf.2005.08.407