The changing behavior of the dielectric constant of a-SiC:H films deposited by remote PECVD with various deposition conditions using HMDS and PPCS

S. H. Cho, Y. Y. Choi, Y. H. Kim, Doo Jin Choi

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

a-SiOC:H films were deposited by a remote PECVD (Plasma Enhanced Chemical Vapor Deposition) system using HMDS (Hexamethyldisilane) and PPCS (Polyphenylcarbosilane) as the precursor. PPCS precursor was synthesized using a Kumada rearrangement at 350°C by KICET (Korea Institute of Ceramic Engineering and Technology). We compared the properties of film deposited using PPCS with that deposited using HMDS. H 2 gas and C 2 H 2 gas were used as the carrier gas and dilution gas, respectively. The deposition temperature was varied between 100°C-250°C. The flow rate of the H 2 carrier gas was varied from 3 to 100 sccm for a study of the deposition conditions which effects the film stoichiometry and dielectric constant of deposited films. The thickness of deposited films was measured by ellipsometry and the dielectric constant was examined by C-V measurements of deposited films. Using both sources without a C 2 H 2 dilution gas led to the deposition of SiO2 films. The depositions using the C 2 H 2 dilution gas caused a change of the carbon ratio and carbon hybridized bonds which play an important role in the change of the dielectric constant.

Original languageEnglish
Pages (from-to)581-585
Number of pages5
JournalJournal of Ceramic Processing Research
Volume11
Issue number5
Publication statusPublished - 2010 Dec 6

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Plasma enhanced chemical vapor deposition
Permittivity
Gases
Dilution
Carbon
Ellipsometry
hexamethyldisilane
Stoichiometry
Flow rate

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites

Cite this

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The changing behavior of the dielectric constant of a-SiC:H films deposited by remote PECVD with various deposition conditions using HMDS and PPCS. / Cho, S. H.; Choi, Y. Y.; Kim, Y. H.; Choi, Doo Jin.

In: Journal of Ceramic Processing Research, Vol. 11, No. 5, 06.12.2010, p. 581-585.

Research output: Contribution to journalArticle

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AB - a-SiOC:H films were deposited by a remote PECVD (Plasma Enhanced Chemical Vapor Deposition) system using HMDS (Hexamethyldisilane) and PPCS (Polyphenylcarbosilane) as the precursor. PPCS precursor was synthesized using a Kumada rearrangement at 350°C by KICET (Korea Institute of Ceramic Engineering and Technology). We compared the properties of film deposited using PPCS with that deposited using HMDS. H 2 gas and C 2 H 2 gas were used as the carrier gas and dilution gas, respectively. The deposition temperature was varied between 100°C-250°C. The flow rate of the H 2 carrier gas was varied from 3 to 100 sccm for a study of the deposition conditions which effects the film stoichiometry and dielectric constant of deposited films. The thickness of deposited films was measured by ellipsometry and the dielectric constant was examined by C-V measurements of deposited films. Using both sources without a C 2 H 2 dilution gas led to the deposition of SiO2 films. The depositions using the C 2 H 2 dilution gas caused a change of the carbon ratio and carbon hybridized bonds which play an important role in the change of the dielectric constant.

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