The characteristics of organic thin film transistors with high-k dielectrics

Chang Su Kim, Woo Jin Kim, Sung Jin Jo, Hong Koo Baik

Research output: Contribution to journalConference article

Abstract

We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of t he oxygen flow rate o n the s tructural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.

Original languageEnglish
Pages (from-to)1288-1290
Number of pages3
JournalProceedings of International Meeting on Information Display
Volume2
Publication statusPublished - 2006 Dec 1
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 2005 Jul 192005 Jul 23

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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