We report on the structural and electrical properties of amorphous Yttria-stabilized zirconia (YSZ) thin films which are the potential high-k gate dielectric material of organic thin film transistor (OTFT). To investigate the influence of t he oxygen flow rate o n the s tructural and electrical properties of the YSZ films, XRD, XPS, J-E, I-V were carried out in this work. Oxygen vacancies are expected to be the most predominant type of defect in metal-oxide dielectrics. The leakage current density decreased mainly because of the reduction of oxygen vacancies with increasing oxygen flow rate.
|Number of pages||3|
|Journal||Proceedings of International Meeting on Information Display|
|Publication status||Published - 2006 Dec 1|
|Event||5th International Meeting on Information Display - Seoul, Korea, Republic of|
Duration: 2005 Jul 19 → 2005 Jul 23
All Science Journal Classification (ASJC) codes