The characterization of etched GaAs surface with HCl or H3PO4 solutions

Min Gu Kang, Seung Hoon Sa, Hyung-Ho Park, Kyung Soo Suh, Kyung Hui Oh

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

The chemical and morphological behavior of a GaAs surface etched with HCl or H3PO4 solutions was characterized using X-ray photoelectron spectroscopy and atomic force microscopy. With HCl and H3PO4 treatments, Ga-Cl and Ga-PO4 residues were produced, respectively. Elemental As initially formed on bare GaAs increased during the etching of the GaAs substrate in all treatments due to preferential etching of Ga. After removal of the native oxide with HCl treatment, selective-corrosive attack occurred, resulting in a deep hole, on which the flatness of the GaAs surface depends. In particular, the different etch rates between Ga (111) and the other planes with H3PO4 solution led to a severely undulated GaAs surface, which consisted of many hollows and Ga (111) facets. The facets and hollows were revealed to be regularly arrayed and elongated in the [110] direction.

Original languageEnglish
Pages (from-to)634-642
Number of pages9
JournalThin Solid Films
Volume308-309
Issue number1-4
DOIs
Publication statusPublished - 1997 Oct 31

Fingerprint

flat surfaces
Etching
hollow
etching
flatness
attack
Atomic force microscopy
X ray photoelectron spectroscopy
Caustics
photoelectron spectroscopy
atomic force microscopy
Oxides
oxides
Substrates
gallium arsenide
x rays
Direction compound

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

Kang, Min Gu ; Sa, Seung Hoon ; Park, Hyung-Ho ; Suh, Kyung Soo ; Oh, Kyung Hui. / The characterization of etched GaAs surface with HCl or H3PO4 solutions. In: Thin Solid Films. 1997 ; Vol. 308-309, No. 1-4. pp. 634-642.
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The characterization of etched GaAs surface with HCl or H3PO4 solutions. / Kang, Min Gu; Sa, Seung Hoon; Park, Hyung-Ho; Suh, Kyung Soo; Oh, Kyung Hui.

In: Thin Solid Films, Vol. 308-309, No. 1-4, 31.10.1997, p. 634-642.

Research output: Contribution to journalArticle

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T1 - The characterization of etched GaAs surface with HCl or H3PO4 solutions

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AB - The chemical and morphological behavior of a GaAs surface etched with HCl or H3PO4 solutions was characterized using X-ray photoelectron spectroscopy and atomic force microscopy. With HCl and H3PO4 treatments, Ga-Cl and Ga-PO4 residues were produced, respectively. Elemental As initially formed on bare GaAs increased during the etching of the GaAs substrate in all treatments due to preferential etching of Ga. After removal of the native oxide with HCl treatment, selective-corrosive attack occurred, resulting in a deep hole, on which the flatness of the GaAs surface depends. In particular, the different etch rates between Ga (111) and the other planes with H3PO4 solution led to a severely undulated GaAs surface, which consisted of many hollows and Ga (111) facets. The facets and hollows were revealed to be regularly arrayed and elongated in the [110] direction.

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