The comparative analysis of S and Se in an (NH4)2(S,Se)1.08-treated GaAs (100) surface

Seung Hoon Sa, Min Gu Kang, Hyung-Ho Park, Kyung Hui Oh

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A GaAs surface was passivated simultaneously with S and Se using an optimized (NH4)2(S,Se)1.08 solution. X-ray photoelectron spectroscopy was used to analyze the surface composition and bonding states after several treatments of GaAs. It was revealed that the passivated surface mainly contained As-(S,Se) bonds. The passivating effect between S and Se could be compared by exposure of the passivated surface to air. During the exposure, the degradation of Se-bond was found to be faster than that of S-bond. However, during in situ annealing under ultra high vacuum conditions, a decrease of S/Se ratio with the temperature was observed. It was revealed that during the anneal, the bond exchange from As-(S,Se) to Ga-(S,Se) occured. Also, high vaporization pressure of S induced the decrease of S content. Because of this evaporation and bonds exchanging reaction, the apparent thermal stability of Se(Ga,As) was found to be higher than that of S-(Ga,As).

Original languageEnglish
Pages (from-to)222-228
Number of pages7
JournalSurface and Coatings Technology
Volume100-101
Issue number1-3
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Ultrahigh vacuum
Vaporization
Surface structure
exchanging
Evaporation
Thermodynamic stability
X ray photoelectron spectroscopy
Annealing
ultrahigh vacuum
Degradation
thermal stability
evaporation
photoelectron spectroscopy
degradation
Air
annealing
gallium arsenide
air
Temperature
x rays

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

Sa, Seung Hoon ; Kang, Min Gu ; Park, Hyung-Ho ; Oh, Kyung Hui. / The comparative analysis of S and Se in an (NH4)2(S,Se)1.08-treated GaAs (100) surface. In: Surface and Coatings Technology. 1998 ; Vol. 100-101, No. 1-3. pp. 222-228.
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The comparative analysis of S and Se in an (NH4)2(S,Se)1.08-treated GaAs (100) surface. / Sa, Seung Hoon; Kang, Min Gu; Park, Hyung-Ho; Oh, Kyung Hui.

In: Surface and Coatings Technology, Vol. 100-101, No. 1-3, 01.01.1998, p. 222-228.

Research output: Contribution to journalArticle

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T1 - The comparative analysis of S and Se in an (NH4)2(S,Se)1.08-treated GaAs (100) surface

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