The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures

M. S. Jang, S. H. Oh, K. H. Lee, J. H. Bahng, J. C. Choi, K. H. Jeong, H. L. Park, D. C. Choo, D. U. Lee, T. W. Kim

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Photoluminescence (PL) and spectroscopic ellipsometry measurements on ZnTe/GaAs strained heterostructures grown by molecular beam epitaxy were carried out to investigate the strain effect depending on the ZnTe epitaxial layer thickness. PL spectra show that the PL peaks corresponding to the excitons bound to neutral acceptors shift toward the higher-energy side with increasing the ZnTe film thickness. As the strain increases, the value of the critical-point energy shift obtained from the spectroscopic ellipsomerty increases. The strains in the ZnTe layers grown on GaAs substrates are expected to decrease with increasing the ZnTe layer thickness. These results indicate that the strains in the ZnTe layers grown on GaAs substrates are strongly dependent on the ZnTe layer thickness.

Original languageEnglish
Pages (from-to)357-360
Number of pages4
JournalJournal of Physics and Chemistry of Solids
Volume64
Issue number2
DOIs
Publication statusPublished - 2003 Feb 1

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Heterojunctions
Photoluminescence
photoluminescence
Spectroscopic ellipsometry
Epitaxial layers
Substrates
Molecular beam epitaxy
Excitons
shift
Film thickness
ellipsometry
critical point
film thickness
molecular beam epitaxy
excitons
gallium arsenide
energy

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Jang, M. S. ; Oh, S. H. ; Lee, K. H. ; Bahng, J. H. ; Choi, J. C. ; Jeong, K. H. ; Park, H. L. ; Choo, D. C. ; Lee, D. U. ; Kim, T. W. / The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures. In: Journal of Physics and Chemistry of Solids. 2003 ; Vol. 64, No. 2. pp. 357-360.
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abstract = "Photoluminescence (PL) and spectroscopic ellipsometry measurements on ZnTe/GaAs strained heterostructures grown by molecular beam epitaxy were carried out to investigate the strain effect depending on the ZnTe epitaxial layer thickness. PL spectra show that the PL peaks corresponding to the excitons bound to neutral acceptors shift toward the higher-energy side with increasing the ZnTe film thickness. As the strain increases, the value of the critical-point energy shift obtained from the spectroscopic ellipsomerty increases. The strains in the ZnTe layers grown on GaAs substrates are expected to decrease with increasing the ZnTe layer thickness. These results indicate that the strains in the ZnTe layers grown on GaAs substrates are strongly dependent on the ZnTe layer thickness.",
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The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures. / Jang, M. S.; Oh, S. H.; Lee, K. H.; Bahng, J. H.; Choi, J. C.; Jeong, K. H.; Park, H. L.; Choo, D. C.; Lee, D. U.; Kim, T. W.

In: Journal of Physics and Chemistry of Solids, Vol. 64, No. 2, 01.02.2003, p. 357-360.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The dependence of the strain effects on the ZnTe layer thicknesses in ZnTe/GaAs heterostructures

AU - Jang, M. S.

AU - Oh, S. H.

AU - Lee, K. H.

AU - Bahng, J. H.

AU - Choi, J. C.

AU - Jeong, K. H.

AU - Park, H. L.

AU - Choo, D. C.

AU - Lee, D. U.

AU - Kim, T. W.

PY - 2003/2/1

Y1 - 2003/2/1

N2 - Photoluminescence (PL) and spectroscopic ellipsometry measurements on ZnTe/GaAs strained heterostructures grown by molecular beam epitaxy were carried out to investigate the strain effect depending on the ZnTe epitaxial layer thickness. PL spectra show that the PL peaks corresponding to the excitons bound to neutral acceptors shift toward the higher-energy side with increasing the ZnTe film thickness. As the strain increases, the value of the critical-point energy shift obtained from the spectroscopic ellipsomerty increases. The strains in the ZnTe layers grown on GaAs substrates are expected to decrease with increasing the ZnTe layer thickness. These results indicate that the strains in the ZnTe layers grown on GaAs substrates are strongly dependent on the ZnTe layer thickness.

AB - Photoluminescence (PL) and spectroscopic ellipsometry measurements on ZnTe/GaAs strained heterostructures grown by molecular beam epitaxy were carried out to investigate the strain effect depending on the ZnTe epitaxial layer thickness. PL spectra show that the PL peaks corresponding to the excitons bound to neutral acceptors shift toward the higher-energy side with increasing the ZnTe film thickness. As the strain increases, the value of the critical-point energy shift obtained from the spectroscopic ellipsomerty increases. The strains in the ZnTe layers grown on GaAs substrates are expected to decrease with increasing the ZnTe layer thickness. These results indicate that the strains in the ZnTe layers grown on GaAs substrates are strongly dependent on the ZnTe layer thickness.

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