The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature

Seung Yong Lee, Tae Hong Kim, Nam Kyu Cho, Han Kyu Seong, Heon Jin Choi, Byung Guk Ahn, Sang Kwon Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was ~0.7 eV with a standard deviation of ~0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (~0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.

Original languageEnglish
Pages (from-to)5042-5046
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume8
Issue number10
DOIs
Publication statusPublished - 2008 Oct 1

Fingerprint

Nanowires
Normal Distribution
Semiconductors
Temperature
Oxides
Metals

All Science Journal Classification (ASJC) codes

  • Bioengineering
  • Chemistry(all)
  • Biomedical Engineering
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

Lee, Seung Yong ; Kim, Tae Hong ; Cho, Nam Kyu ; Seong, Han Kyu ; Choi, Heon Jin ; Ahn, Byung Guk ; Lee, Sang Kwon. / The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature. In: Journal of Nanoscience and Nanotechnology. 2008 ; Vol. 8, No. 10. pp. 5042-5046.
@article{751f17625af6417084fa5d3176d09175,
title = "The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature",
abstract = "We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was ~0.7 eV with a standard deviation of ~0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (~0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.",
author = "Lee, {Seung Yong} and Kim, {Tae Hong} and Cho, {Nam Kyu} and Seong, {Han Kyu} and Choi, {Heon Jin} and Ahn, {Byung Guk} and Lee, {Sang Kwon}",
year = "2008",
month = "10",
day = "1",
doi = "10.1166/jnn.2008.1074",
language = "English",
volume = "8",
pages = "5042--5046",
journal = "Journal of Nanoscience and Nanotechnology",
issn = "1533-4880",
publisher = "American Scientific Publishers",
number = "10",

}

The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature. / Lee, Seung Yong; Kim, Tae Hong; Cho, Nam Kyu; Seong, Han Kyu; Choi, Heon Jin; Ahn, Byung Guk; Lee, Sang Kwon.

In: Journal of Nanoscience and Nanotechnology, Vol. 8, No. 10, 01.10.2008, p. 5042-5046.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The determination of modified barrier heights in Ti/GaN nano-Schottky diodes at high temperature

AU - Lee, Seung Yong

AU - Kim, Tae Hong

AU - Cho, Nam Kyu

AU - Seong, Han Kyu

AU - Choi, Heon Jin

AU - Ahn, Byung Guk

AU - Lee, Sang Kwon

PY - 2008/10/1

Y1 - 2008/10/1

N2 - We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was ~0.7 eV with a standard deviation of ~0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (~0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.

AB - We have investigated the size-effect of the nano-Schottky diodes on the electrical transport properties and the temperature-dependent current transport mechanism in a metal-semiconductor nanowire junction (a Ti/GaN nano-Schottky diode) using current-voltage characterization in the range of 300-423 K. We found that the modified mean Schottky barrier height (SBH) was ~0.7 eV with a standard deviation of ~0.14 V using a Gaussian distribution model of the barrier heights. The slightly high value of the modified mean SBH (~0.11 eV) compared to the results from the thin-film based Ti/GaN Schottky diodes could be due to an additional oxide layer at the interface between the Ti and GaN nanowires. Moreover, we found that the abnormal behavior of the barrier heights and the ideality factors in a Ti/GaN nano-Schottky diode at a temperature below 423 K could be explained by a combination of the enhancement of the tunneling current and a model with a Gaussian distribution of the barrier heights.

UR - http://www.scopus.com/inward/record.url?scp=58149240215&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58149240215&partnerID=8YFLogxK

U2 - 10.1166/jnn.2008.1074

DO - 10.1166/jnn.2008.1074

M3 - Article

C2 - 19198387

AN - SCOPUS:58149240215

VL - 8

SP - 5042

EP - 5046

JO - Journal of Nanoscience and Nanotechnology

JF - Journal of Nanoscience and Nanotechnology

SN - 1533-4880

IS - 10

ER -