The diffusion of silicon atoms in stack structures of La2O 3 and Al2O3

W. J. Lee, J. W. Ma, J. M. Bae, C. Y. Kim, K. S. Jeong, Mann-Ho Cho, K. B. Chung, H. Kim, H. J. Cho, D. C. Kim

Research output: Contribution to journalArticle

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Abstract

The interfacial reactions and electrical characteristics of stack structures of La2O3 and Al2O3 were investigated as a function of the annealing temperature. In the case of Al 2O3/La2O3/Si (ALO structure), the La2O3 in contact with the Si substrate was readily transformed into La-silicate by the diffusion of Si atoms, while in the case of La2O3/Al2O3/Si (LAO structure), interfacial reactions between the Al2O3 layer and the Si substrate were suppressed. After an annealing treatment at 700° C, the Al 2O3 in the ALO structure can play an effective role in blocking the hydration of La2O3, resulting in an unchanged interfacial layer. However, the Al2O3 layer in the LAO structure was unable to suppress the diffusion of Si atoms into the La 2O3 film. When the annealing temperature reached 900°C, both structures showed a similar depth distribution with a high content of Si atoms diffused into the films. The change in the elemental distributions via the diffusion and reaction of Si atoms affected the electrical characteristics at the interface between ALO/LAO structure and Si substrate, specifically the trap charge density (Dit) and band gap (E g) values.

Original languageEnglish
Pages (from-to)633-639
Number of pages7
JournalCurrent Applied Physics
Volume13
Issue number4
DOIs
Publication statusPublished - 2013 Jan 1

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Silicon
Atoms
silicon
Annealing
Surface chemistry
annealing
atoms
Substrates
Silicates
Charge density
Hydration
hydration
silicates
Energy gap
traps
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy(all)

Cite this

Lee, W. J., Ma, J. W., Bae, J. M., Kim, C. Y., Jeong, K. S., Cho, M-H., ... Kim, D. C. (2013). The diffusion of silicon atoms in stack structures of La2O 3 and Al2O3. Current Applied Physics, 13(4), 633-639. https://doi.org/10.1016/j.cap.2012.10.001
Lee, W. J. ; Ma, J. W. ; Bae, J. M. ; Kim, C. Y. ; Jeong, K. S. ; Cho, Mann-Ho ; Chung, K. B. ; Kim, H. ; Cho, H. J. ; Kim, D. C. / The diffusion of silicon atoms in stack structures of La2O 3 and Al2O3. In: Current Applied Physics. 2013 ; Vol. 13, No. 4. pp. 633-639.
@article{a4ea2303e68c401aa06d85d9b69c037a,
title = "The diffusion of silicon atoms in stack structures of La2O 3 and Al2O3",
abstract = "The interfacial reactions and electrical characteristics of stack structures of La2O3 and Al2O3 were investigated as a function of the annealing temperature. In the case of Al 2O3/La2O3/Si (ALO structure), the La2O3 in contact with the Si substrate was readily transformed into La-silicate by the diffusion of Si atoms, while in the case of La2O3/Al2O3/Si (LAO structure), interfacial reactions between the Al2O3 layer and the Si substrate were suppressed. After an annealing treatment at 700° C, the Al 2O3 in the ALO structure can play an effective role in blocking the hydration of La2O3, resulting in an unchanged interfacial layer. However, the Al2O3 layer in the LAO structure was unable to suppress the diffusion of Si atoms into the La 2O3 film. When the annealing temperature reached 900°C, both structures showed a similar depth distribution with a high content of Si atoms diffused into the films. The change in the elemental distributions via the diffusion and reaction of Si atoms affected the electrical characteristics at the interface between ALO/LAO structure and Si substrate, specifically the trap charge density (Dit) and band gap (E g) values.",
author = "Lee, {W. J.} and Ma, {J. W.} and Bae, {J. M.} and Kim, {C. Y.} and Jeong, {K. S.} and Mann-Ho Cho and Chung, {K. B.} and H. Kim and Cho, {H. J.} and Kim, {D. C.}",
year = "2013",
month = "1",
day = "1",
doi = "10.1016/j.cap.2012.10.001",
language = "English",
volume = "13",
pages = "633--639",
journal = "Current Applied Physics",
issn = "1567-1739",
publisher = "Elsevier",
number = "4",

}

Lee, WJ, Ma, JW, Bae, JM, Kim, CY, Jeong, KS, Cho, M-H, Chung, KB, Kim, H, Cho, HJ & Kim, DC 2013, 'The diffusion of silicon atoms in stack structures of La2O 3 and Al2O3', Current Applied Physics, vol. 13, no. 4, pp. 633-639. https://doi.org/10.1016/j.cap.2012.10.001

The diffusion of silicon atoms in stack structures of La2O 3 and Al2O3. / Lee, W. J.; Ma, J. W.; Bae, J. M.; Kim, C. Y.; Jeong, K. S.; Cho, Mann-Ho; Chung, K. B.; Kim, H.; Cho, H. J.; Kim, D. C.

In: Current Applied Physics, Vol. 13, No. 4, 01.01.2013, p. 633-639.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The diffusion of silicon atoms in stack structures of La2O 3 and Al2O3

AU - Lee, W. J.

AU - Ma, J. W.

AU - Bae, J. M.

AU - Kim, C. Y.

AU - Jeong, K. S.

AU - Cho, Mann-Ho

AU - Chung, K. B.

AU - Kim, H.

AU - Cho, H. J.

AU - Kim, D. C.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - The interfacial reactions and electrical characteristics of stack structures of La2O3 and Al2O3 were investigated as a function of the annealing temperature. In the case of Al 2O3/La2O3/Si (ALO structure), the La2O3 in contact with the Si substrate was readily transformed into La-silicate by the diffusion of Si atoms, while in the case of La2O3/Al2O3/Si (LAO structure), interfacial reactions between the Al2O3 layer and the Si substrate were suppressed. After an annealing treatment at 700° C, the Al 2O3 in the ALO structure can play an effective role in blocking the hydration of La2O3, resulting in an unchanged interfacial layer. However, the Al2O3 layer in the LAO structure was unable to suppress the diffusion of Si atoms into the La 2O3 film. When the annealing temperature reached 900°C, both structures showed a similar depth distribution with a high content of Si atoms diffused into the films. The change in the elemental distributions via the diffusion and reaction of Si atoms affected the electrical characteristics at the interface between ALO/LAO structure and Si substrate, specifically the trap charge density (Dit) and band gap (E g) values.

AB - The interfacial reactions and electrical characteristics of stack structures of La2O3 and Al2O3 were investigated as a function of the annealing temperature. In the case of Al 2O3/La2O3/Si (ALO structure), the La2O3 in contact with the Si substrate was readily transformed into La-silicate by the diffusion of Si atoms, while in the case of La2O3/Al2O3/Si (LAO structure), interfacial reactions between the Al2O3 layer and the Si substrate were suppressed. After an annealing treatment at 700° C, the Al 2O3 in the ALO structure can play an effective role in blocking the hydration of La2O3, resulting in an unchanged interfacial layer. However, the Al2O3 layer in the LAO structure was unable to suppress the diffusion of Si atoms into the La 2O3 film. When the annealing temperature reached 900°C, both structures showed a similar depth distribution with a high content of Si atoms diffused into the films. The change in the elemental distributions via the diffusion and reaction of Si atoms affected the electrical characteristics at the interface between ALO/LAO structure and Si substrate, specifically the trap charge density (Dit) and band gap (E g) values.

UR - http://www.scopus.com/inward/record.url?scp=84890979645&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84890979645&partnerID=8YFLogxK

U2 - 10.1016/j.cap.2012.10.001

DO - 10.1016/j.cap.2012.10.001

M3 - Article

VL - 13

SP - 633

EP - 639

JO - Current Applied Physics

JF - Current Applied Physics

SN - 1567-1739

IS - 4

ER -