The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes

Dongseok Shin, Byungchoul Park, Youngcheol Chae, Ilgu Yun

Research output: Contribution to journalArticle

Abstract

Silicon single-photon avalanche diodes (Si-SPADs) fabricated with standard CMOS technology and providing the advantages of low noise, low cost, and compatibility with additional circuits are promising candidates for single-photon detection fields. The guard ring is a key component of SPADs, which prevents premature edge breakdown and improves the electric field distribution to the intended multiplication region. The choice of proper physical dimensions, especially the active radius (AR) and the size of the guard ring, is important for the better performance of Si-SPADs. In this paper, a Si-SPAD with a deep virtual guard ring fabricated through deep well diffusion is proposed and the effect of the physical variation of the AR and guard ring width on the device characteristics is investigated. In addition, the effect of physical variation on the device characteristics is analyzed and explained by means of technology computer-aided design (TCAD) simulations.

Original languageEnglish
Article number8710606
Pages (from-to)2986-2991
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume66
Issue number7
DOIs
Publication statusPublished - 2019 Jul

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Avalanche diodes
Silicon
Photons
Computer aided design
Electric fields
Networks (circuits)
Costs
SPAD

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

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abstract = "Silicon single-photon avalanche diodes (Si-SPADs) fabricated with standard CMOS technology and providing the advantages of low noise, low cost, and compatibility with additional circuits are promising candidates for single-photon detection fields. The guard ring is a key component of SPADs, which prevents premature edge breakdown and improves the electric field distribution to the intended multiplication region. The choice of proper physical dimensions, especially the active radius (AR) and the size of the guard ring, is important for the better performance of Si-SPADs. In this paper, a Si-SPAD with a deep virtual guard ring fabricated through deep well diffusion is proposed and the effect of the physical variation of the AR and guard ring width on the device characteristics is investigated. In addition, the effect of physical variation on the device characteristics is analyzed and explained by means of technology computer-aided design (TCAD) simulations.",
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The Effect of a Deep Virtual Guard Ring on the Device Characteristics of Silicon Single Photon Avalanche Diodes. / Shin, Dongseok; Park, Byungchoul; Chae, Youngcheol; Yun, Ilgu.

In: IEEE Transactions on Electron Devices, Vol. 66, No. 7, 8710606, 07.2019, p. 2986-2991.

Research output: Contribution to journalArticle

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