The effect of a Si capping layer on RF characteristics of high-k/metal gate SiGe channel pMOSFETs

Min Sang Park, Kyong Taek Lee, Chang Yong Kang, Gil Bok Choi, Hyun Chul Sagong, Chang Woo Sohn, Byoung Gi Min, Jungwoo Oh, Prashant Majhi, Hsing Huang Tseng, Jack C. Lee, Jeong Soo Lee, Raj Jammy, Yoon Ha Jeong

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

We present a comparative study of the effects of a Si capping layer on SiGe channel pMOSFETs used for radio-frequency (RF) applications. In Si-capped devices, the drive current increases because Si/SiGe heterojunction layers form a SiGe quantum well, which reduces carrier scattering. Conversely, SiGe samples without a Si capping layer suffer severe interface degradation, due to Ge diffusing into the gate dielectric. Devices using a Si capping layer have enhanced RF performance and reduced low-frequency noise, which is a key factor affecting phase noise. There is an increase in the RF figures of merit. These benefits indicate that a Si capping layer should be used in SiGe channel pMOSFETs.

Original languageEnglish
Article number5555934
Pages (from-to)1104-1106
Number of pages3
JournalIEEE Electron Device Letters
Volume31
Issue number10
DOIs
Publication statusPublished - 2010 Oct 1

Fingerprint

Metals
Gate dielectrics
Phase noise
Semiconductor quantum wells
Heterojunctions
Scattering
Degradation

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Park, M. S., Lee, K. T., Kang, C. Y., Choi, G. B., Sagong, H. C., Sohn, C. W., ... Jeong, Y. H. (2010). The effect of a Si capping layer on RF characteristics of high-k/metal gate SiGe channel pMOSFETs. IEEE Electron Device Letters, 31(10), 1104-1106. [5555934]. https://doi.org/10.1109/LED.2010.2061212
Park, Min Sang ; Lee, Kyong Taek ; Kang, Chang Yong ; Choi, Gil Bok ; Sagong, Hyun Chul ; Sohn, Chang Woo ; Min, Byoung Gi ; Oh, Jungwoo ; Majhi, Prashant ; Tseng, Hsing Huang ; Lee, Jack C. ; Lee, Jeong Soo ; Jammy, Raj ; Jeong, Yoon Ha. / The effect of a Si capping layer on RF characteristics of high-k/metal gate SiGe channel pMOSFETs. In: IEEE Electron Device Letters. 2010 ; Vol. 31, No. 10. pp. 1104-1106.
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Park, MS, Lee, KT, Kang, CY, Choi, GB, Sagong, HC, Sohn, CW, Min, BG, Oh, J, Majhi, P, Tseng, HH, Lee, JC, Lee, JS, Jammy, R & Jeong, YH 2010, 'The effect of a Si capping layer on RF characteristics of high-k/metal gate SiGe channel pMOSFETs', IEEE Electron Device Letters, vol. 31, no. 10, 5555934, pp. 1104-1106. https://doi.org/10.1109/LED.2010.2061212

The effect of a Si capping layer on RF characteristics of high-k/metal gate SiGe channel pMOSFETs. / Park, Min Sang; Lee, Kyong Taek; Kang, Chang Yong; Choi, Gil Bok; Sagong, Hyun Chul; Sohn, Chang Woo; Min, Byoung Gi; Oh, Jungwoo; Majhi, Prashant; Tseng, Hsing Huang; Lee, Jack C.; Lee, Jeong Soo; Jammy, Raj; Jeong, Yoon Ha.

In: IEEE Electron Device Letters, Vol. 31, No. 10, 5555934, 01.10.2010, p. 1104-1106.

Research output: Contribution to journalArticle

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AU - Tseng, Hsing Huang

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AU - Lee, Jeong Soo

AU - Jammy, Raj

AU - Jeong, Yoon Ha

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