The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs

Sun Jae Kim, Young Wook Lee, Soo Yeon Lee, Jong Suk Woo, Jang Yeon Kwon, Min Koo Han, Woo Geun Lee, Kap Soo Yoon

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

We investigated AC bias stress instability of indium-gallium-zinc-oxide (IGZO) Thin-film transistors (TFTs). AC bias frequency dependence showed different aspect in IGZO TFTs and a-Si:H TFTs. Influencing factors to AC bias frequency dependence of instability is charge accumulation characteristic under negative bias stress, and detrapping characteristics of shallow trapped charges under positive bias stress.

Original languageEnglish
Title of host publication49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Pages1195-1197
Number of pages3
Publication statusPublished - 2011 Dec 1
Event49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 - Los Angeles, CA, United States
Duration: 2011 May 152011 May 20

Publication series

Name49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
Volume3

Other

Other49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011
CountryUnited States
CityLos Angeles, CA
Period11/5/1511/5/20

All Science Journal Classification (ASJC) codes

  • Hardware and Architecture

Fingerprint Dive into the research topics of 'The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs'. Together they form a unique fingerprint.

  • Cite this

    Kim, S. J., Lee, Y. W., Lee, S. Y., Woo, J. S., Kwon, J. Y., Han, M. K., Lee, W. G., & Yoon, K. S. (2011). The effect of AC bias frequency on threshold voltage shift of the amorphous oxide TFTs. In 49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011 (pp. 1195-1197). (49th Annual SID Symposium, Seminar, and Exhibition 2011, Display Week 2011; Vol. 3).