The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature

Jimin Chae, Hyo Jin Kim, Sang Han Park, Sangwan Cho, Mann-Ho Cho

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We investigated the thermal stability of ZrO2/GaAs structures deposited by pulsed laser deposition as a function of the post-annealing temperature. During the annealing process the interfacial layer between the pulsed laser deposited ZrO2 thin film and GaAs substrate increased significantly at the temperature of 500°C, and the ZrO2 thin film became fully crystallized to the monoclinic phase at the temperature of 600°C. This resulted in the degradation of electrical properties such as the leakage current and the breakdown voltage, and an interfacial trap charge density. In order to improve the thermal stability, we pre-deposited an Al 2O3 passivation layer by atomic layer deposition followed by pulsed laser deposited ZrO2 deposition. The amorphous Al 2O3 passivation layer hindered the crystallization of the ZrO2 thin film during the annealing process, significantly improving the electrical characteristics of the resulting structure compared to the ZrO2/GaAs structures without an Al2O3 passivation layer. In particular, the interfacial reaction was effectively suppressed up to a temperature of 600°C so that the interface trap charge density was significantly decreased due to the low oxygen diffusivity of Al 2O3 layer.

Original languageEnglish
Pages (from-to)215-220
Number of pages6
JournalThin Solid Films
Volume558
DOIs
Publication statusPublished - 2014 May 2

Fingerprint

Pulsed lasers
Passivation
passivity
pulsed lasers
Annealing
annealing
Substrates
Charge density
Thin films
Thermodynamic stability
thermal stability
Temperature
thin films
temperature
Atomic layer deposition
traps
Pulsed laser deposition
Crystallization
Surface chemistry
Electric breakdown

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

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title = "The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature",
abstract = "We investigated the thermal stability of ZrO2/GaAs structures deposited by pulsed laser deposition as a function of the post-annealing temperature. During the annealing process the interfacial layer between the pulsed laser deposited ZrO2 thin film and GaAs substrate increased significantly at the temperature of 500°C, and the ZrO2 thin film became fully crystallized to the monoclinic phase at the temperature of 600°C. This resulted in the degradation of electrical properties such as the leakage current and the breakdown voltage, and an interfacial trap charge density. In order to improve the thermal stability, we pre-deposited an Al 2O3 passivation layer by atomic layer deposition followed by pulsed laser deposited ZrO2 deposition. The amorphous Al 2O3 passivation layer hindered the crystallization of the ZrO2 thin film during the annealing process, significantly improving the electrical characteristics of the resulting structure compared to the ZrO2/GaAs structures without an Al2O3 passivation layer. In particular, the interfacial reaction was effectively suppressed up to a temperature of 600°C so that the interface trap charge density was significantly decreased due to the low oxygen diffusivity of Al 2O3 layer.",
author = "Jimin Chae and Kim, {Hyo Jin} and Park, {Sang Han} and Sangwan Cho and Mann-Ho Cho",
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The effect of Al2O3 passivation layer in pulsed-laser-deposited ZrO2 films on n-GaAs substrate as a function of post-annealing temperature. / Chae, Jimin; Kim, Hyo Jin; Park, Sang Han; Cho, Sangwan; Cho, Mann-Ho.

In: Thin Solid Films, Vol. 558, 02.05.2014, p. 215-220.

Research output: Contribution to journalArticle

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AB - We investigated the thermal stability of ZrO2/GaAs structures deposited by pulsed laser deposition as a function of the post-annealing temperature. During the annealing process the interfacial layer between the pulsed laser deposited ZrO2 thin film and GaAs substrate increased significantly at the temperature of 500°C, and the ZrO2 thin film became fully crystallized to the monoclinic phase at the temperature of 600°C. This resulted in the degradation of electrical properties such as the leakage current and the breakdown voltage, and an interfacial trap charge density. In order to improve the thermal stability, we pre-deposited an Al 2O3 passivation layer by atomic layer deposition followed by pulsed laser deposited ZrO2 deposition. The amorphous Al 2O3 passivation layer hindered the crystallization of the ZrO2 thin film during the annealing process, significantly improving the electrical characteristics of the resulting structure compared to the ZrO2/GaAs structures without an Al2O3 passivation layer. In particular, the interfacial reaction was effectively suppressed up to a temperature of 600°C so that the interface trap charge density was significantly decreased due to the low oxygen diffusivity of Al 2O3 layer.

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