The effect of aluminum doping on crystallinity, non-lattice oxygen, and resistance switching of Al-doped HfO2 films deposited by reactive sputtering

Kyumin Lee, Heedo Na, Hyunchul Sohn, Jonggi Kim

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In this work, the resistance switching characteristics of Al-doped HfO2 thin films were investigated with by systematically varying the Al concentration and analyzing of the microstructure and the chemical bonding states. TiN/Al-doped HfO2/Pt metal-insulator-metal stacks were fabricated with various Al concentrations of up to 16.8% by using reactive DC magnetron co-sputtering. X-ray diffraction and transmission electron microscopy measurement showed that HfO2 doped with more than 10.4% Al had an amorphous structure, while HfO2 doped with Al of less than 5.6% had a crystalline structure. X-ray photoelectron spectroscopy (XPS) showed that the concentration of non-lattice oxygen in Aldoped HfO2 films increased with increasing Al up to 5.6% and was saturated for Al concentrations above 5.6%. TiN/Al-doped HfO2/Pt stacks showed typical bipolar resistance switching characteristics. HfO2 doped with Al = 5.6% showed the smallest grains and the smallest uniformity in the forming electric field and the SET/RESET resistance distribution. We conclude that the grain boundaries play a more important role than point defects such as non-lattice oxygen in the resistance switching.

Original languageEnglish
Pages (from-to)709-716
Number of pages8
JournalJournal of the Korean Physical Society
Volume65
Issue number5
DOIs
Publication statusPublished - 2014 Sep 1

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crystallinity
sputtering
aluminum
oxygen
metals
point defects
x rays
grain boundaries
direct current
insulators
photoelectron spectroscopy
transmission electron microscopy
microstructure
electric fields
thin films
diffraction

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{1d25f1effba1474c91479d511d685a06,
title = "The effect of aluminum doping on crystallinity, non-lattice oxygen, and resistance switching of Al-doped HfO2 films deposited by reactive sputtering",
abstract = "In this work, the resistance switching characteristics of Al-doped HfO2 thin films were investigated with by systematically varying the Al concentration and analyzing of the microstructure and the chemical bonding states. TiN/Al-doped HfO2/Pt metal-insulator-metal stacks were fabricated with various Al concentrations of up to 16.8{\%} by using reactive DC magnetron co-sputtering. X-ray diffraction and transmission electron microscopy measurement showed that HfO2 doped with more than 10.4{\%} Al had an amorphous structure, while HfO2 doped with Al of less than 5.6{\%} had a crystalline structure. X-ray photoelectron spectroscopy (XPS) showed that the concentration of non-lattice oxygen in Aldoped HfO2 films increased with increasing Al up to 5.6{\%} and was saturated for Al concentrations above 5.6{\%}. TiN/Al-doped HfO2/Pt stacks showed typical bipolar resistance switching characteristics. HfO2 doped with Al = 5.6{\%} showed the smallest grains and the smallest uniformity in the forming electric field and the SET/RESET resistance distribution. We conclude that the grain boundaries play a more important role than point defects such as non-lattice oxygen in the resistance switching.",
author = "Kyumin Lee and Heedo Na and Hyunchul Sohn and Jonggi Kim",
year = "2014",
month = "9",
day = "1",
doi = "10.3938/jkps.65.709",
language = "English",
volume = "65",
pages = "709--716",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "5",

}

The effect of aluminum doping on crystallinity, non-lattice oxygen, and resistance switching of Al-doped HfO2 films deposited by reactive sputtering. / Lee, Kyumin; Na, Heedo; Sohn, Hyunchul; Kim, Jonggi.

In: Journal of the Korean Physical Society, Vol. 65, No. 5, 01.09.2014, p. 709-716.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of aluminum doping on crystallinity, non-lattice oxygen, and resistance switching of Al-doped HfO2 films deposited by reactive sputtering

AU - Lee, Kyumin

AU - Na, Heedo

AU - Sohn, Hyunchul

AU - Kim, Jonggi

PY - 2014/9/1

Y1 - 2014/9/1

N2 - In this work, the resistance switching characteristics of Al-doped HfO2 thin films were investigated with by systematically varying the Al concentration and analyzing of the microstructure and the chemical bonding states. TiN/Al-doped HfO2/Pt metal-insulator-metal stacks were fabricated with various Al concentrations of up to 16.8% by using reactive DC magnetron co-sputtering. X-ray diffraction and transmission electron microscopy measurement showed that HfO2 doped with more than 10.4% Al had an amorphous structure, while HfO2 doped with Al of less than 5.6% had a crystalline structure. X-ray photoelectron spectroscopy (XPS) showed that the concentration of non-lattice oxygen in Aldoped HfO2 films increased with increasing Al up to 5.6% and was saturated for Al concentrations above 5.6%. TiN/Al-doped HfO2/Pt stacks showed typical bipolar resistance switching characteristics. HfO2 doped with Al = 5.6% showed the smallest grains and the smallest uniformity in the forming electric field and the SET/RESET resistance distribution. We conclude that the grain boundaries play a more important role than point defects such as non-lattice oxygen in the resistance switching.

AB - In this work, the resistance switching characteristics of Al-doped HfO2 thin films were investigated with by systematically varying the Al concentration and analyzing of the microstructure and the chemical bonding states. TiN/Al-doped HfO2/Pt metal-insulator-metal stacks were fabricated with various Al concentrations of up to 16.8% by using reactive DC magnetron co-sputtering. X-ray diffraction and transmission electron microscopy measurement showed that HfO2 doped with more than 10.4% Al had an amorphous structure, while HfO2 doped with Al of less than 5.6% had a crystalline structure. X-ray photoelectron spectroscopy (XPS) showed that the concentration of non-lattice oxygen in Aldoped HfO2 films increased with increasing Al up to 5.6% and was saturated for Al concentrations above 5.6%. TiN/Al-doped HfO2/Pt stacks showed typical bipolar resistance switching characteristics. HfO2 doped with Al = 5.6% showed the smallest grains and the smallest uniformity in the forming electric field and the SET/RESET resistance distribution. We conclude that the grain boundaries play a more important role than point defects such as non-lattice oxygen in the resistance switching.

UR - http://www.scopus.com/inward/record.url?scp=84907674146&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84907674146&partnerID=8YFLogxK

U2 - 10.3938/jkps.65.709

DO - 10.3938/jkps.65.709

M3 - Article

AN - SCOPUS:84907674146

VL - 65

SP - 709

EP - 716

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 5

ER -