The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji; Ji In Kim; Hong Yoon Jung; Se Yeob Park; Yeon Gon Mo; Jong Han Jeong; Jang Yeon Kwon; Myung Kwan Ryu; Sang Yoon Lee; Rino Choi; Jae Kyeong Jeong

doi:10.1149/1.3483787

The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji, Ji In Kim, Hong Yoon Jung, Se Yeob Park, Yeon Gon Mo, Jong Han Jeong, Jang Yeon Kwon, Myung Kwan Ryu, Sang Yoon Lee, Rino Choi, Jae Kyeong Jeong

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

62 Citations (Scopus)

Abstract

The impact of a gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated. The IGZO TFTs with SiO₂ GI showed consistently better stability against the applied temperature stress and positive/negative gate bias stress than their counterparts with SiN_x GI. This superior stability of the SiO ₂ -gated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. Based on the Meyer-Neldel rule, the total DOS energy distribution for both devices was extracted and compared, which can explain the experimental observation.

Original language	English
Pages (from-to)	H983-H986
Journal	Journal of the Electrochemical Society
Volume	157
Issue number	11
DOIs	https://doi.org/10.1149/1.3483787
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1149/1.3483787

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@article{2b3996d23f654faa9222a6035e8a6874,

title = "The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors",

abstract = "The impact of a gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated. The IGZO TFTs with SiO2 GI showed consistently better stability against the applied temperature stress and positive/negative gate bias stress than their counterparts with SiNx GI. This superior stability of the SiO 2 -gated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. Based on the Meyer-Neldel rule, the total DOS energy distribution for both devices was extracted and compared, which can explain the experimental observation.",

author = "Ji, {Kwang Hwan} and Kim, {Ji In} and Jung, {Hong Yoon} and Park, {Se Yeob} and Mo, {Yeon Gon} and Jeong, {Jong Han} and Kwon, {Jang Yeon} and Ryu, {Myung Kwan} and Lee, {Sang Yoon} and Rino Choi and Jeong, {Jae Kyeong}",

year = "2010",

doi = "10.1149/1.3483787",

language = "English",

volume = "157",

pages = "H983--H986",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "11",

}

TY - JOUR

T1 - The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors

AU - Ji, Kwang Hwan

AU - Kim, Ji In

AU - Jung, Hong Yoon

AU - Park, Se Yeob

AU - Mo, Yeon Gon

AU - Jeong, Jong Han

AU - Kwon, Jang Yeon

AU - Ryu, Myung Kwan

AU - Lee, Sang Yoon

AU - Choi, Rino

AU - Jeong, Jae Kyeong

PY - 2010

Y1 - 2010

N2 - The impact of a gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated. The IGZO TFTs with SiO2 GI showed consistently better stability against the applied temperature stress and positive/negative gate bias stress than their counterparts with SiNx GI. This superior stability of the SiO 2 -gated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. Based on the Meyer-Neldel rule, the total DOS energy distribution for both devices was extracted and compared, which can explain the experimental observation.

AB - The impact of a gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated. The IGZO TFTs with SiO2 GI showed consistently better stability against the applied temperature stress and positive/negative gate bias stress than their counterparts with SiNx GI. This superior stability of the SiO 2 -gated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. Based on the Meyer-Neldel rule, the total DOS energy distribution for both devices was extracted and compared, which can explain the experimental observation.

UR - http://www.scopus.com/inward/record.url?scp=77957701589&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77957701589&partnerID=8YFLogxK

U2 - 10.1149/1.3483787

DO - 10.1149/1.3483787

M3 - Article

AN - SCOPUS:77957701589

VL - 157

SP - H983-H986

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 11

ER -

The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors

Abstract

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