The effect of density-of-state on the temperature and gate bias-induced instability of InGaZnO thin film transistors

Kwang Hwan Ji, Ji In Kim, Hong Yoon Jung, Se Yeob Park, Yeon Gon Mo, Jong Han Jeong, Jang Yeon Kwon, Myung Kwan Ryu, Sang Yoon Lee, Rino Choi, Jae Kyeong Jeong

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60 Citations (Scopus)

Abstract

The impact of a gate insulator (GI) material on the device instability of InGaZnO (IGZO) thin film transistors (TFTs) was investigated. The IGZO TFTs with SiO2 GI showed consistently better stability against the applied temperature stress and positive/negative gate bias stress than their counterparts with SiNx GI. This superior stability of the SiO 2 -gated device was attributed to the reduced total density of states (DOS) including the interfacial and semiconductor bulk trap densities. Based on the Meyer-Neldel rule, the total DOS energy distribution for both devices was extracted and compared, which can explain the experimental observation.

Original languageEnglish
Pages (from-to)H983-H986
JournalJournal of the Electrochemical Society
Volume157
Issue number11
DOIs
Publication statusPublished - 2010

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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