The effect of dynamic bias stress on the photon-enhanced threshold voltage instability of amorphous HfInZnO thin-film transistors

Kyoung Seok Son, Hyun Suk Kim, Wan Joo Maeng, Ji Sim Jung, Kwang Hee Lee, Tae Sang Kim, Joon Seok Park, Jang Yeon Kwon, Bonwon Koo, Sang Yoon Lee

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Abstract

The electrical stability of amorphous HfInZnO (HIZO) thin-film transistors (TFTs) was investigated under static and dynamic stress conditions, with simultaneous visible light radiation. The extent of device degradation is found to be strongly sensitive to the gate voltage, pulse duty ratio, pulse frequency, and exposure to visible light. Dynamic stress experiments demonstrate that highly stable devices can be realized by adjusting the pulse duty ratio and frequency, which suggests that amorphous HIZO TFTs are a promising candidate of switching devices for large-area high-resolution AMLCD applications.

Original languageEnglish
Article number5680586
Pages (from-to)1-3
Number of pages3
JournalIEEE Electron Device Letters
Volume32
Issue number2
DOIs
Publication statusPublished - 2011 Feb 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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    Son, K. S., Kim, H. S., Maeng, W. J., Jung, J. S., Lee, K. H., Kim, T. S., Park, J. S., Kwon, J. Y., Koo, B., & Lee, S. Y. (2011). The effect of dynamic bias stress on the photon-enhanced threshold voltage instability of amorphous HfInZnO thin-film transistors. IEEE Electron Device Letters, 32(2), 1-3. [5680586]. https://doi.org/10.1109/LED.2010.2093867