The effect of gate length on channel strain of recessed source/drain Si 1-xC x

Dae Hong Ko, Sun Wook Kim, Dae Seop Byeon, Sangmo Koo, Mijin Jung, Saurabh Chopra, Yihwan Kim, Hoo Jeong Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In this study, we investigated the effects of the dimensional scaling of n-channel field-effect transistors on the channel strain. We employed nanobeam diffraction to independently determine the effects of scaling of two major transistor dimensions (gate and source/ drain length) on the channel strain. Both these parameters influenced the channel strain, but in the opposite directions: the channel strain increased with the gate length decreasing, while declining with the reduction of the source/ drain length. Using device simulation, we also considered the combined effects of all the main scaling factors, disclosing that the strain decreased with the reduction of the dimensions.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages160-161
Number of pages2
DOIs
Publication statusPublished - 2012 Jul 30
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period12/6/412/6/6

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Field effect transistors
Transistors
Diffraction

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ko, D. H., Kim, S. W., Byeon, D. S., Koo, S., Jung, M., Chopra, S., ... Lee, H. J. (2012). The effect of gate length on channel strain of recessed source/drain Si 1-xC x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 160-161). [6222509] https://doi.org/10.1109/ISTDM.2012.6222509
Ko, Dae Hong ; Kim, Sun Wook ; Byeon, Dae Seop ; Koo, Sangmo ; Jung, Mijin ; Chopra, Saurabh ; Kim, Yihwan ; Lee, Hoo Jeong. / The effect of gate length on channel strain of recessed source/drain Si 1-xC x 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. pp. 160-161
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abstract = "In this study, we investigated the effects of the dimensional scaling of n-channel field-effect transistors on the channel strain. We employed nanobeam diffraction to independently determine the effects of scaling of two major transistor dimensions (gate and source/ drain length) on the channel strain. Both these parameters influenced the channel strain, but in the opposite directions: the channel strain increased with the gate length decreasing, while declining with the reduction of the source/ drain length. Using device simulation, we also considered the combined effects of all the main scaling factors, disclosing that the strain decreased with the reduction of the dimensions.",
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Ko, DH, Kim, SW, Byeon, DS, Koo, S, Jung, M, Chopra, S, Kim, Y & Lee, HJ 2012, The effect of gate length on channel strain of recessed source/drain Si 1-xC x in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222509, pp. 160-161, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222509

The effect of gate length on channel strain of recessed source/drain Si 1-xC x . / Ko, Dae Hong; Kim, Sun Wook; Byeon, Dae Seop; Koo, Sangmo; Jung, Mijin; Chopra, Saurabh; Kim, Yihwan; Lee, Hoo Jeong.

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 160-161 6222509.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Ko DH, Kim SW, Byeon DS, Koo S, Jung M, Chopra S et al. The effect of gate length on channel strain of recessed source/drain Si 1-xC x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 160-161. 6222509 https://doi.org/10.1109/ISTDM.2012.6222509