The effect of Gd substitution in perovskite lanthanum strontium manganite films for use in resistive switching devices

La_0.7-xGd_xSr_0.3MnO₃(LSGMO: x = 0.1, 0.3, and 0.5) perovskite manganite thin films were formed on a Pt(111)/Ti/SiO₂/Si(100) substrate heated to 500°C using a radio frequency magnetron sputter. The effects of substituted Gd³⁺on the physical, chemical, and electrical properties of perovskite manganite thin films were systematically investigated. X-ray diffraction results showed that the crystallinity of the films was affected by the substitution of La³⁺with Gd³⁺ions. Raman spectroscopy analysis showed an increase in both the tilt of the MnO₆octahedron and the structural distortion as a result of Gd³⁺substitution. This is due to the increased structural instability of LSGMO associated with the rhombohedral structure, which can be contrasted with a stable crystalline structure of Gd_0.7Sr_0.3MnO₃such as orthorhombic. From the above analyses, it was revealed that structural distortion, crystallinity, and bond strength could affect on resistive switching property.