The effect of Gd substitution in perovskite lanthanum strontium manganite films for use in resistive switching devices

Hong Sub Lee, Sun Gyu Choi, Geun Young Yeom, Hyung Ho Park

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

La0.7-xGdxSr0.3MnO3(LSGMO: x = 0.1, 0.3, and 0.5) perovskite manganite thin films were formed on a Pt(111)/Ti/SiO2/Si(100) substrate heated to 500°C using a radio frequency magnetron sputter. The effects of substituted Gd3+on the physical, chemical, and electrical properties of perovskite manganite thin films were systematically investigated. X-ray diffraction results showed that the crystallinity of the films was affected by the substitution of La3+with Gd3+ions. Raman spectroscopy analysis showed an increase in both the tilt of the MnO6octahedron and the structural distortion as a result of Gd3+substitution. This is due to the increased structural instability of LSGMO associated with the rhombohedral structure, which can be contrasted with a stable crystalline structure of Gd0.7Sr0.3MnO3such as orthorhombic. From the above analyses, it was revealed that structural distortion, crystallinity, and bond strength could affect on resistive switching property.

Original languageEnglish
Pages (from-to)622-625
Number of pages4
JournalJournal of the Ceramic Society of Japan
Volume122
Issue number1428
DOIs
Publication statusPublished - 2014 Aug 1

Fingerprint

Lanthanum
Strontium
lanthanum
strontium
Perovskite
crystallinity
Substitution reactions
substitutes
Thin films
thin films
chemical properties
Chemical properties
Raman spectroscopy
radio frequencies
Electric properties
Physical properties
physical properties
electrical properties
Ions
Crystalline materials

All Science Journal Classification (ASJC) codes

  • Ceramics and Composites
  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

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title = "The effect of Gd substitution in perovskite lanthanum strontium manganite films for use in resistive switching devices",
abstract = "La0.7-xGdxSr0.3MnO3(LSGMO: x = 0.1, 0.3, and 0.5) perovskite manganite thin films were formed on a Pt(111)/Ti/SiO2/Si(100) substrate heated to 500°C using a radio frequency magnetron sputter. The effects of substituted Gd3+on the physical, chemical, and electrical properties of perovskite manganite thin films were systematically investigated. X-ray diffraction results showed that the crystallinity of the films was affected by the substitution of La3+with Gd3+ions. Raman spectroscopy analysis showed an increase in both the tilt of the MnO6octahedron and the structural distortion as a result of Gd3+substitution. This is due to the increased structural instability of LSGMO associated with the rhombohedral structure, which can be contrasted with a stable crystalline structure of Gd0.7Sr0.3MnO3such as orthorhombic. From the above analyses, it was revealed that structural distortion, crystallinity, and bond strength could affect on resistive switching property.",
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The effect of Gd substitution in perovskite lanthanum strontium manganite films for use in resistive switching devices. / Lee, Hong Sub; Choi, Sun Gyu; Yeom, Geun Young; Park, Hyung Ho.

In: Journal of the Ceramic Society of Japan, Vol. 122, No. 1428, 01.08.2014, p. 622-625.

Research output: Contribution to journalArticle

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AU - Park, Hyung Ho

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