The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x

Dae Hong Ko, Sun Wook Kim, Sangmo Koo, Mijin Jung, Hoo Jeong Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages162-163
Number of pages2
DOIs
Publication statusPublished - 2012
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Publication series

Name2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period12/6/412/6/6

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

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