The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x

Dae Hong Ko, Sun Wook Kim, Sangmo Koo, Mijin Jung, Hoo Jeong Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

Original languageEnglish
Title of host publication2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings
Pages162-163
Number of pages2
DOIs
Publication statusPublished - 2012 Jul 30
Event6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Berkeley, CA, United States
Duration: 2012 Jun 42012 Jun 6

Other

Other6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
CountryUnited States
CityBerkeley, CA
Period12/6/412/6/6

Fingerprint

Condensation
Annealing
Diffraction
Transmission electron microscopy
Cooling

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ko, D. H., Kim, S. W., Koo, S., Jung, M., & Lee, H. J. (2012). The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings (pp. 162-163). [6222510] https://doi.org/10.1109/ISTDM.2012.6222510
Ko, Dae Hong ; Kim, Sun Wook ; Koo, Sangmo ; Jung, Mijin ; Lee, Hoo Jeong. / The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. pp. 162-163
@inproceedings{fdc695c711484daf8199b3a66f257a1f,
title = "The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x",
abstract = "This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.",
author = "Ko, {Dae Hong} and Kim, {Sun Wook} and Sangmo Koo and Mijin Jung and Lee, {Hoo Jeong}",
year = "2012",
month = "7",
day = "30",
doi = "10.1109/ISTDM.2012.6222510",
language = "English",
isbn = "9781457718625",
pages = "162--163",
booktitle = "2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings",

}

Ko, DH, Kim, SW, Koo, S, Jung, M & Lee, HJ 2012, The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x in 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings., 6222510, pp. 162-163, 6th International Silicon-Germanium Technology and Device Meeting, ISTDM 2012, Berkeley, CA, United States, 12/6/4. https://doi.org/10.1109/ISTDM.2012.6222510

The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x . / Ko, Dae Hong; Kim, Sun Wook; Koo, Sangmo; Jung, Mijin; Lee, Hoo Jeong.

2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 162-163 6222510.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x

AU - Ko, Dae Hong

AU - Kim, Sun Wook

AU - Koo, Sangmo

AU - Jung, Mijin

AU - Lee, Hoo Jeong

PY - 2012/7/30

Y1 - 2012/7/30

N2 - This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

AB - This study reports on Ni germanosilicide formation on recessed Si 0.82Ge 0.18 source/drain structures and its effects on channel strain. A combination of transmission electron microscopy techniques,including nanobeam diffraction, shed some light on a previously unrecognized factor in the channel strain evolution during silicidation: a Ge accumulation layer produced at the bottom of the germanosilicide layer. The formation of such a Ge rich layer added an additional compressive strain to the channel strain upon moderate silicidation, while the contribution of thermal strain arising from the cooling cycle became dominant in an excessively silicided sample, which turned the channel strain into a tensile value.

UR - http://www.scopus.com/inward/record.url?scp=84864230001&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864230001&partnerID=8YFLogxK

U2 - 10.1109/ISTDM.2012.6222510

DO - 10.1109/ISTDM.2012.6222510

M3 - Conference contribution

SN - 9781457718625

SP - 162

EP - 163

BT - 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings

ER -

Ko DH, Kim SW, Koo S, Jung M, Lee HJ. The effect of Ge condensation on channel strain during the post annealing process of recessed source/drain Si 1-xGe x In 2012 International Silicon-Germanium Technology and Device Meeting, ISTDM 2012 - Proceedings. 2012. p. 162-163. 6222510 https://doi.org/10.1109/ISTDM.2012.6222510