In an effort to protect a RBSC (reaction-bonded silicon carbide) reaction tube, SiC films were chemically vapor deposited on RBSC substrates. SiC films were prepared to investigate the effect of the input gas ratios (dilute ratio, α = PH2/PMTS = QH2/QMTS) on the growth behavior using MTS (metyltrichlorosilane, CH3SiCl3) as a source in hydrogen atmosphere. The growth rate of SiC films increased and then decreased with the decrease of the input gas ratio at the deposition temperature of 1250°C. The microstructure and preferred orientation of SiC films were changed with the input gas ratio; Granular type grain structure exhibited the preferred orientation of (111) plane in the high input gas ratio region (α = 3-10). Faceted columnar grain structure showed the preferred orientation of (220) plane at the low input gas ratios (α = 1-2). The growth behavior of CVD SiC films with the input gas ratio was correlated with the change of the deposition mechanism from surface kinetics to mass transfer.
Bibliographical noteFunding Information:
The authors acknowledge the support of the Ministry of Commerce, Industry and Energy research fund for industry foundation technology development work.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering