The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices

Il Sup Jin, Hyung Ho Park, Tae Song Kim

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The ferroelectric property of Pb(Zrcursive chiTi1-x)O3 (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO2 phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.

Original languageEnglish
Pages (from-to)229-233
Number of pages5
JournalSurface and Coatings Technology
Volume100-101
Issue number1-3
DOIs
Publication statusPublished - 1998 Jan 1

Fingerprint

Electric space charge
space charge
Electric properties
electrical properties
Fatigue of materials
Data storage equipment
Electrodes
electrodes
Interface states
Diffractometers
Rutherford backscattering spectroscopy
Auger electron spectroscopy
diffractometers
Oxides
Spectrometry
Auger spectroscopy
Ferroelectric materials
electron spectroscopy
backscattering
x rays

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry

Cite this

@article{217df63c34094df28cd038b709745d39,
title = "The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices",
abstract = "The ferroelectric property of Pb(Zrcursive chiTi1-x)O3 (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO2 phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.",
author = "Jin, {Il Sup} and Park, {Hyung Ho} and Kim, {Tae Song}",
year = "1998",
month = "1",
day = "1",
doi = "10.1016/S0257-8972(97)00619-1",
language = "English",
volume = "100-101",
pages = "229--233",
journal = "Surface and Coatings Technology",
issn = "0257-8972",
publisher = "Elsevier",
number = "1-3",

}

The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices. / Jin, Il Sup; Park, Hyung Ho; Kim, Tae Song.

In: Surface and Coatings Technology, Vol. 100-101, No. 1-3, 01.01.1998, p. 229-233.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of interfacial state on electrical properties of PZT-electrode system for applying to nonvolatile memory devices

AU - Jin, Il Sup

AU - Park, Hyung Ho

AU - Kim, Tae Song

PY - 1998/1/1

Y1 - 1998/1/1

N2 - The ferroelectric property of Pb(Zrcursive chiTi1-x)O3 (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO2 phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.

AB - The ferroelectric property of Pb(Zrcursive chiTi1-x)O3 (PZT) films have been reported to be greatly dependent on the interfacial state between PZT and electrode. However, the interfacial state of this system is not studied well and much is not known. In this study, we investigated the effect of phase, compositional and interfacial states of PZT-Pt bi-layered thin film system on its electrical properties using X-ray diffractometer, X-ray photoelectron spectroscopy, Auger electron spectroscopy and Rutherford backscattering spectrometry. The improvement of fatigue property after the post-anneal could be explained based on the space charge layer model. During the post-anneal, the decomposition of α-PbO2 phase was observed. This compensates the loss of Pb and O in PZT near the interface which can cause space charge accumulation and fatigue. And also the reduction of Pt oxide was observed which induces the ideal interface state.

UR - http://www.scopus.com/inward/record.url?scp=0032022799&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032022799&partnerID=8YFLogxK

U2 - 10.1016/S0257-8972(97)00619-1

DO - 10.1016/S0257-8972(97)00619-1

M3 - Article

VL - 100-101

SP - 229

EP - 233

JO - Surface and Coatings Technology

JF - Surface and Coatings Technology

SN - 0257-8972

IS - 1-3

ER -