The effect of intermediate anneal on the ferroelectric properties of direct-patternable PZT films

Jae Seob Hwang, Woo Sik Kim, Hyung-Ho Park, Tae Song Kim

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The effect of intermediate annealing ambient was investigated for the preparation of thick direct-patternable lead zirconium titanate (PbZr xTi1-xO3; PZT, x = 0.52) films using photosensitive stock solution containing diethanolamine (DEA) as stabilizer and ortho-nitrobenzaldehyde (NBAL) as cross-linking agent by metal-organic deposition method. The intermediate anneal was done at 400°C; for 20 min under air or O2 ambient. The intermediate anneal under O2 brought almost complete removal of organic species, however after anneal under air, carbon and hydrogen atomic species as organic fragment remained in the film. This incomplete removal of organic fragments induced the grain growth of PZT film without influencing from Pt substrate and the formation of micro-voids on film surface during final anneal for the crystallization of PZT film with perovskite structure. The growth direction and surface microstructure of PZT film was revealed to highly affect on leakage, capacitance, fatigue, and piezoelectric properties of PZT film. For PZT film with intermediate anneal under O2, a good piezoelectric property, d33 = 336 pC/N was obtained with pneumatic loading method, and this film showed 26.2 μC/cm2 of remnant polarization (Pr), 35.6kV/cm of coercive field (Ec) and well-developed and saturated hysteretic loop. The dielectric constant was obtained as 1795 from the C-V measurement at 1 MHz and 40% of initial polarization value was remained after 109 switching cycles through bipolar square wave of ±10 V at 500 kHz. From the comparison of physical and electrical properties of PZT films prepared with different intermediate anneal ambient such as O2 or air, it can be said that the intermediate annealing condition is very important procedure to control the properties of PZT film for applying it to piezoelectric system devices.

Original languageEnglish
Pages (from-to)137-142
Number of pages6
JournalSensors and Actuators, A: Physical
Volume117
Issue number1
DOIs
Publication statusPublished - 2005 Jan 3

Fingerprint

Ferroelectric materials
diethanolamine
2-nitrobenzaldehyde
air
Air
fragments
Annealing
Polarization
annealing
pneumatics
square waves
polarization
Crystallization
Grain growth
Zirconium
Pneumatics
Perovskite
voids
Hydrogen
Electric properties

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Instrumentation
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Electrical and Electronic Engineering

Cite this

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title = "The effect of intermediate anneal on the ferroelectric properties of direct-patternable PZT films",
abstract = "The effect of intermediate annealing ambient was investigated for the preparation of thick direct-patternable lead zirconium titanate (PbZr xTi1-xO3; PZT, x = 0.52) films using photosensitive stock solution containing diethanolamine (DEA) as stabilizer and ortho-nitrobenzaldehyde (NBAL) as cross-linking agent by metal-organic deposition method. The intermediate anneal was done at 400°C; for 20 min under air or O2 ambient. The intermediate anneal under O2 brought almost complete removal of organic species, however after anneal under air, carbon and hydrogen atomic species as organic fragment remained in the film. This incomplete removal of organic fragments induced the grain growth of PZT film without influencing from Pt substrate and the formation of micro-voids on film surface during final anneal for the crystallization of PZT film with perovskite structure. The growth direction and surface microstructure of PZT film was revealed to highly affect on leakage, capacitance, fatigue, and piezoelectric properties of PZT film. For PZT film with intermediate anneal under O2, a good piezoelectric property, d33 = 336 pC/N was obtained with pneumatic loading method, and this film showed 26.2 μC/cm2 of remnant polarization (Pr), 35.6kV/cm of coercive field (Ec) and well-developed and saturated hysteretic loop. The dielectric constant was obtained as 1795 from the C-V measurement at 1 MHz and 40{\%} of initial polarization value was remained after 109 switching cycles through bipolar square wave of ±10 V at 500 kHz. From the comparison of physical and electrical properties of PZT films prepared with different intermediate anneal ambient such as O2 or air, it can be said that the intermediate annealing condition is very important procedure to control the properties of PZT film for applying it to piezoelectric system devices.",
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The effect of intermediate anneal on the ferroelectric properties of direct-patternable PZT films. / Hwang, Jae Seob; Kim, Woo Sik; Park, Hyung-Ho; Kim, Tae Song.

In: Sensors and Actuators, A: Physical, Vol. 117, No. 1, 03.01.2005, p. 137-142.

Research output: Contribution to journalArticle

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