Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.
Bibliographical noteFunding Information:
This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0 (2007)].
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)