The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors

Doo Na Kim, Dong Lim Kim, Gun Hee Kim, Si Joon Kim, You Seung Rim, Woong Hee Jeong, Hyun Jae Kim

Research output: Contribution to journalArticle

49 Citations (Scopus)

Abstract

Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.

Original languageEnglish
Article number192105
JournalApplied Physics Letters
Volume97
Issue number19
DOIs
Publication statusPublished - 2010 Nov 8

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transistors
suppressors
oxides
thin films
threshold voltage
electric potential
oxygen
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kim, Doo Na ; Kim, Dong Lim ; Kim, Gun Hee ; Kim, Si Joon ; Rim, You Seung ; Jeong, Woong Hee ; Kim, Hyun Jae. / The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors. In: Applied Physics Letters. 2010 ; Vol. 97, No. 19.
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The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors. / Kim, Doo Na; Kim, Dong Lim; Kim, Gun Hee; Kim, Si Joon; Rim, You Seung; Jeong, Woong Hee; Kim, Hyun Jae.

In: Applied Physics Letters, Vol. 97, No. 19, 192105, 08.11.2010.

Research output: Contribution to journalArticle

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AU - Jeong, Woong Hee

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