Abstract
Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.
| Original language | English |
|---|---|
| Article number | 192105 |
| Journal | Applied Physics Letters |
| Volume | 97 |
| Issue number | 19 |
| DOIs | |
| Publication status | Published - 2010 Nov 8 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors. / Kim, Doo Na; Kim, Dong Lim; Kim, Gun Hee; Kim, Si Joon; Rim, You Seung; Jeong, Woong Hee; Kim, Hyun Jae.
In: Applied Physics Letters, Vol. 97, No. 19, 192105, 08.11.2010.Research output: Contribution to journal › Article
TY - JOUR
T1 - The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors
AU - Kim, Doo Na
AU - Kim, Dong Lim
AU - Kim, Gun Hee
AU - Kim, Si Joon
AU - Rim, You Seung
AU - Jeong, Woong Hee
AU - Kim, Hyun Jae
PY - 2010/11/8
Y1 - 2010/11/8
N2 - Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.
AB - Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.
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U2 - 10.1063/1.3506503
DO - 10.1063/1.3506503
M3 - Article
AN - SCOPUS:78249266622
VL - 97
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 19
M1 - 192105
ER -