The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors

Doo Na Kim; Dong Lim Kim; Gun Hee Kim; Si Joon Kim; You Seung Rim; Woong Hee Jeong; Hyun Jae Kim

doi:10.1063/1.3506503

The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors

Doo Na Kim, Dong Lim Kim, Gun Hee Kim, Si Joon Kim, You Seung Rim, Woong Hee Jeong, Hyun Jae Kim

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

60 Citations (Scopus)

Abstract

Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La³⁺ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La³⁺ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm² /V s, 7.86 V, 0.6 V/dec, and ∼ 10⁶, respectively.

Original language	English
Article number	192105
Journal	Applied Physics Letters
Volume	97
Issue number	19
DOIs	https://doi.org/10.1063/1.3506503
Publication status	Published - 2010 Nov 8

Bibliographical note

Funding Information:
This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0 (2007)].

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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title = "The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors",

abstract = "Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.",

author = "Kim, {Doo Na} and Kim, {Dong Lim} and Kim, {Gun Hee} and Kim, {Si Joon} and Rim, {You Seung} and Jeong, {Woong Hee} and Kim, {Hyun Jae}",

note = "Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0 (2007)].",

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AU - Kim, Doo Na

AU - Kim, Dong Lim

AU - Kim, Gun Hee

AU - Kim, Si Joon

AU - Rim, You Seung

AU - Jeong, Woong Hee

AU - Kim, Hyun Jae

N1 - Funding Information: This work was supported by the National Research Foundation of Korea (NRF) through the National Research Laboratory Program grant funded by the Korean Ministry of Education, Science and Technology (MEST) [Grant No. R0A-2007-000-10044-0 (2007)].

PY - 2010/11/8

Y1 - 2010/11/8

N2 - Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.

AB - Solution-processed thin-film transistors (TFTs) with La-In-Zn-O (LIZO) as an active channel layer were fabricated with various mole ratios of La. The La3+ additive affected the metal-oxygen bond and made the band gap of LIZO films wider. This behavior indicates that La3+ could play the role of carrier suppressor in InZnO (IZO) systems and significantly reduce the off-current of LIZO films. The optimum LIZO TFT occurred at a LIZO mole ratio of 0.5:5:5 and its channel mobility, threshold voltage, subthreshold swing voltage, and on/off ratio were 2.64 cm2 /V s, 7.86 V, 0.6 V/dec, and ∼ 106, respectively.

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The effect of la in InZnO systems for solution-processed amorphous oxide thin-film transistors

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