The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition

Il Kwon Oh, Min Kyu Kim, Jae Seung Lee, Chang Wan Lee, Clement Lansalot-Matras, Wontae Noh, Jusang Park, Atif Noori, David Thompson, Schubert Chu, W. J. Maeng, Hyungjun Kim

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We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalApplied Surface Science
Publication statusPublished - 2013 Jan 1


All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Oh, I. K., Kim, M. K., Lee, J. S., Lee, C. W., Lansalot-Matras, C., Noh, W., Park, J., Noori, A., Thompson, D., Chu, S., Maeng, W. J., & Kim, H. (2013). The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition Applied Surface Science, 287, 349-354.