The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition

Il Kwon Oh, Min Kyu Kim, Jae Seung Lee, Chang Wan Lee, Clement Lansalot-Matras, Wontae Noh, Jusang Park, Atif Noori, David Thompson, Schubert Chu, W. J. Maeng, Hyungjun Kim

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Abstract

We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.

Original languageEnglish
Pages (from-to)349-354
Number of pages6
JournalApplied Surface Science
Volume287
DOIs
Publication statusPublished - 2013 Jan 1

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Atomic layer deposition
Electric properties
Substrates
Hafnium
MOS capacitors
Lanthanum
Interface states
Electric potential
Hysteresis
Capacitance
X ray photoelectron spectroscopy
lanthanum oxide
Chemical analysis

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

Oh, Il Kwon ; Kim, Min Kyu ; Lee, Jae Seung ; Lee, Chang Wan ; Lansalot-Matras, Clement ; Noh, Wontae ; Park, Jusang ; Noori, Atif ; Thompson, David ; Chu, Schubert ; Maeng, W. J. ; Kim, Hyungjun. / The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition In: Applied Surface Science. 2013 ; Vol. 287. pp. 349-354.
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abstract = "We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.",
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Oh, IK, Kim, MK, Lee, JS, Lee, CW, Lansalot-Matras, C, Noh, W, Park, J, Noori, A, Thompson, D, Chu, S, Maeng, WJ & Kim, H 2013, ' The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition ', Applied Surface Science, vol. 287, pp. 349-354. https://doi.org/10.1016/j.apsusc.2013.09.153

The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition . / Oh, Il Kwon; Kim, Min Kyu; Lee, Jae Seung; Lee, Chang Wan; Lansalot-Matras, Clement; Noh, Wontae; Park, Jusang; Noori, Atif; Thompson, David; Chu, Schubert; Maeng, W. J.; Kim, Hyungjun.

In: Applied Surface Science, Vol. 287, 01.01.2013, p. 349-354.

Research output: Contribution to journalArticle

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T1 - The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition

AU - Oh, Il Kwon

AU - Kim, Min Kyu

AU - Lee, Jae Seung

AU - Lee, Chang Wan

AU - Lansalot-Matras, Clement

AU - Noh, Wontae

AU - Park, Jusang

AU - Noori, Atif

AU - Thompson, David

AU - Chu, Schubert

AU - Maeng, W. J.

AU - Kim, Hyungjun

PY - 2013/1/1

Y1 - 2013/1/1

N2 - We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.

AB - We compared the electrical properties of HfO 2 , HfO 2 /La 2 O 3 , and La-doped HfO 2 gate insulators deposited on Ge substrate using an atomic layer deposition (ALD) process. TDMAH [tetrakis(dimethylamino)hafnium] and La(iprCp) 3 [tris(isopropyl-cyclopentadienyl) lanthanum] were employed as Hf and La precursors, respectively. Chemical compositions and binding structures were analyzed by X-ray photoelectron spectroscopy (XPS). Electrical properties were evaluated by capacitance-voltage (C-V) and current-voltage (I-V) measurements. We found that incorporation of La 2 O 3 near Ge can enhance the electrical properties of Ge MOS capacitors. The best electrical properties of 50 mV of hysteresis and mid ∼10 12 cm -2 eV -1 range interface states were found for the 400° C-annealed HfO 2 /La 2 O 3 bilayer sample. These values are significantly better than those of ALD HfO 2 gate insulators on Ge. We attribute this to the formation of LaGeO x layers on the Ge surface, which reduces Ge O bonding.

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