The effect of La 2 O 3 -incorporation in HfO 2 dielectrics on Ge substrate by atomic layer deposition

Il Kwon Oh, Min Kyu Kim, Jae Seung Lee, Chang Wan Lee, Clement Lansalot-Matras, Wontae Noh, Jusang Park, Atif Noori, David Thompson, Schubert Chu, W. J. Maeng, Hyungjun Kim

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Engineering & Materials Science

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