The effect of low-k dielectrics on RFIC inductors

Jong Hyeok Jeon, Emigdio J. Inigo, Michael T. Reiha, Tae Young Choi, Yongshik Lee, Saeed Mohammadi, Linda P.B. Katehi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.

Original languageEnglish
Title of host publicationConference Proceedings - 33rd European Microwave Conference, EuMC 2003
PublisherIEEE Computer Society
Pages53-56
Number of pages4
ISBN (Print)1580538347, 9781580538343
DOIs
Publication statusPublished - 2003
Event33rd European Microwave Conference, EuMC 2003 - Munich, Germany
Duration: 2003 Oct 72003 Oct 7

Publication series

NameConference Proceedings - 33rd European Microwave Conference, EuMC 2003
Volume1

Other

Other33rd European Microwave Conference, EuMC 2003
CountryGermany
CityMunich
Period03/10/703/10/7

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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  • Cite this

    Jeon, J. H., Inigo, E. J., Reiha, M. T., Choi, T. Y., Lee, Y., Mohammadi, S., & Katehi, L. P. B. (2003). The effect of low-k dielectrics on RFIC inductors. In Conference Proceedings - 33rd European Microwave Conference, EuMC 2003 (pp. 53-56). [1262216] (Conference Proceedings - 33rd European Microwave Conference, EuMC 2003; Vol. 1). IEEE Computer Society. https://doi.org/10.1109/EUMC.2003.1262216