The effect of low-k dielectrics on RFIC inductors

Jong Hyeok Jeon, Emigdio J. Inigo, Michael T. Reiha, Tae Young Choi, Yongshik Lee, Saeed Mohammadi, Linda P.B. Katehi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.

Original languageEnglish
Title of host publicationConference Proceedings - 33rd European Microwave Conference, EuMC 2003
PublisherIEEE Computer Society
Pages53-56
Number of pages4
Volume1
ISBN (Print)1580538347, 9781580538343
DOIs
Publication statusPublished - 2003 Jan 1
Event33rd European Microwave Conference, EuMC 2003 - Munich, Germany
Duration: 2003 Oct 72003 Oct 7

Other

Other33rd European Microwave Conference, EuMC 2003
CountryGermany
CityMunich
Period03/10/703/10/7

Fingerprint

Fabrication
Silicon
Polymers
Substrates
Low-k dielectric

All Science Journal Classification (ASJC) codes

  • Computer Networks and Communications
  • Hardware and Architecture
  • Electrical and Electronic Engineering

Cite this

Jeon, J. H., Inigo, E. J., Reiha, M. T., Choi, T. Y., Lee, Y., Mohammadi, S., & Katehi, L. P. B. (2003). The effect of low-k dielectrics on RFIC inductors. In Conference Proceedings - 33rd European Microwave Conference, EuMC 2003 (Vol. 1, pp. 53-56). [1262216] IEEE Computer Society. https://doi.org/10.1109/EUMC.2003.1262216
Jeon, Jong Hyeok ; Inigo, Emigdio J. ; Reiha, Michael T. ; Choi, Tae Young ; Lee, Yongshik ; Mohammadi, Saeed ; Katehi, Linda P.B. / The effect of low-k dielectrics on RFIC inductors. Conference Proceedings - 33rd European Microwave Conference, EuMC 2003. Vol. 1 IEEE Computer Society, 2003. pp. 53-56
@inproceedings{067d9b901a19493dbcbcb9865cb11c03,
title = "The effect of low-k dielectrics on RFIC inductors",
abstract = "This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.",
author = "Jeon, {Jong Hyeok} and Inigo, {Emigdio J.} and Reiha, {Michael T.} and Choi, {Tae Young} and Yongshik Lee and Saeed Mohammadi and Katehi, {Linda P.B.}",
year = "2003",
month = "1",
day = "1",
doi = "10.1109/EUMC.2003.1262216",
language = "English",
isbn = "1580538347",
volume = "1",
pages = "53--56",
booktitle = "Conference Proceedings - 33rd European Microwave Conference, EuMC 2003",
publisher = "IEEE Computer Society",
address = "United States",

}

Jeon, JH, Inigo, EJ, Reiha, MT, Choi, TY, Lee, Y, Mohammadi, S & Katehi, LPB 2003, The effect of low-k dielectrics on RFIC inductors. in Conference Proceedings - 33rd European Microwave Conference, EuMC 2003. vol. 1, 1262216, IEEE Computer Society, pp. 53-56, 33rd European Microwave Conference, EuMC 2003, Munich, Germany, 03/10/7. https://doi.org/10.1109/EUMC.2003.1262216

The effect of low-k dielectrics on RFIC inductors. / Jeon, Jong Hyeok; Inigo, Emigdio J.; Reiha, Michael T.; Choi, Tae Young; Lee, Yongshik; Mohammadi, Saeed; Katehi, Linda P.B.

Conference Proceedings - 33rd European Microwave Conference, EuMC 2003. Vol. 1 IEEE Computer Society, 2003. p. 53-56 1262216.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

TY - GEN

T1 - The effect of low-k dielectrics on RFIC inductors

AU - Jeon, Jong Hyeok

AU - Inigo, Emigdio J.

AU - Reiha, Michael T.

AU - Choi, Tae Young

AU - Lee, Yongshik

AU - Mohammadi, Saeed

AU - Katehi, Linda P.B.

PY - 2003/1/1

Y1 - 2003/1/1

N2 - This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.

AB - This paper presents design, fabrication, and optimization of high quality factor (Q) inductors on low dielectric polymers implemented on a high resistivity silicon substrate. Both Benzocyclobutene (BCB) and SU-8TM dielectrics were used as low dielectric material. A maximum Q > 20 at 8GHz was measured for a 2.5nH inductor on SU8TM deposited on high resistivity Si.

UR - http://www.scopus.com/inward/record.url?scp=84897487708&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84897487708&partnerID=8YFLogxK

U2 - 10.1109/EUMC.2003.1262216

DO - 10.1109/EUMC.2003.1262216

M3 - Conference contribution

AN - SCOPUS:84897487708

SN - 1580538347

SN - 9781580538343

VL - 1

SP - 53

EP - 56

BT - Conference Proceedings - 33rd European Microwave Conference, EuMC 2003

PB - IEEE Computer Society

ER -

Jeon JH, Inigo EJ, Reiha MT, Choi TY, Lee Y, Mohammadi S et al. The effect of low-k dielectrics on RFIC inductors. In Conference Proceedings - 33rd European Microwave Conference, EuMC 2003. Vol. 1. IEEE Computer Society. 2003. p. 53-56. 1262216 https://doi.org/10.1109/EUMC.2003.1262216