The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

Kwang Hee Lee; Ji Sim Jung; Kyoung Seok Son; Joon Seok Park; Tae Sang Kim; Rino Choi; Jae Kyeong Jeong; Jang Yeon Kwon; Bonwon Koo; Sangyun Lee

doi:10.1063/1.3272015

The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

Kwang Hee Lee, Ji Sim Jung, Kyoung Seok Son, Joon Seok Park, Tae Sang Kim, Rino Choi, Jae Kyeong Jeong, Jang Yeon Kwon, Bonwon Koo, Sangyun Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

317 Citations (Scopus)

Abstract

We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide (GIZO) thin film transistors. The application of light on the negative bias temperature stress (NBTS) accelerated the negative displacement of the threshold voltage (V_th). This phenomenon can be attributed to the trapping of the photon-induced carriers into the gate dielectric/channel interface or the gate dielectric bulk. Interestingly, the negative V_th shift under photon-enhanced NBTS condition worsened in relatively humid environments. It is suggested that moisture is a significant parameter that induces the degradation of bias-stressed GIZO transistors.

Original language	English
Article number	232106
Journal	Applied Physics Letters
Volume	95
Issue number	23
DOIs	https://doi.org/10.1063/1.3272015
Publication status	Published - 2009

Bibliographical note

Funding Information:
J.K.J acknowledges the support of Inha University Research Grant (Grant No. INHA-39250).

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.3272015

Cite this

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title = "The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors",

abstract = "We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide (GIZO) thin film transistors. The application of light on the negative bias temperature stress (NBTS) accelerated the negative displacement of the threshold voltage (Vth). This phenomenon can be attributed to the trapping of the photon-induced carriers into the gate dielectric/channel interface or the gate dielectric bulk. Interestingly, the negative Vth shift under photon-enhanced NBTS condition worsened in relatively humid environments. It is suggested that moisture is a significant parameter that induces the degradation of bias-stressed GIZO transistors.",

author = "Lee, {Kwang Hee} and Jung, {Ji Sim} and Son, {Kyoung Seok} and Park, {Joon Seok} and Kim, {Tae Sang} and Rino Choi and Jeong, {Jae Kyeong} and Kwon, {Jang Yeon} and Bonwon Koo and Sangyun Lee",

note = "Funding Information: J.K.J acknowledges the support of Inha University Research Grant (Grant No. INHA-39250).",

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doi = "10.1063/1.3272015",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

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T1 - The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

AU - Lee, Kwang Hee

AU - Jung, Ji Sim

AU - Son, Kyoung Seok

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Choi, Rino

AU - Jeong, Jae Kyeong

AU - Kwon, Jang Yeon

AU - Koo, Bonwon

AU - Lee, Sangyun

N1 - Funding Information: J.K.J acknowledges the support of Inha University Research Grant (Grant No. INHA-39250).

PY - 2009

Y1 - 2009

N2 - We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide (GIZO) thin film transistors. The application of light on the negative bias temperature stress (NBTS) accelerated the negative displacement of the threshold voltage (Vth). This phenomenon can be attributed to the trapping of the photon-induced carriers into the gate dielectric/channel interface or the gate dielectric bulk. Interestingly, the negative Vth shift under photon-enhanced NBTS condition worsened in relatively humid environments. It is suggested that moisture is a significant parameter that induces the degradation of bias-stressed GIZO transistors.

AB - We investigated the impact of photon irradiation on the stability of gallium-indium-zinc oxide (GIZO) thin film transistors. The application of light on the negative bias temperature stress (NBTS) accelerated the negative displacement of the threshold voltage (Vth). This phenomenon can be attributed to the trapping of the photon-induced carriers into the gate dielectric/channel interface or the gate dielectric bulk. Interestingly, the negative Vth shift under photon-enhanced NBTS condition worsened in relatively humid environments. It is suggested that moisture is a significant parameter that induces the degradation of bias-stressed GIZO transistors.

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The effect of moisture on the photon-enhanced negative bias thermal instability in Ga-In-Zn-O thin film transistors

Abstract

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