The effect of NH3 on the interface of HfO2 and Al2O3 films on GaAs (100) surfaces

Dong Chan Suh, Young Dae Cho, Dae Hong Ko, Kwun Bum Chung, Mann Ho Cho, Yongshik Lee

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

In this letter, we investigate the effects of heat treatment under NH3 ambient on the Ga-0 at the interface between GaAs and high-k dielectric materials deposited by atomic layer deposition (ALD). Compared with the heat treatment results under N2 ambient, the monochromatic x-ray photoelectron spectroscopy (XPS) analysis reveal that the formation of Ga-0 is greatly suppressed when under NH3 ambient, both at 500° C and 700° C, for HfO2. However, similar experiments for Al 2O3 deposited by atomic layer deposition (ALD) show that the effect of NH3 heat treatment is minimal. We examine the different reaction mechanisms of the nitridation processes for the two different high-k dielectric materials on GaAs. Also, the capacitance-voltage (C-V) properties of metal-insulator-semiconductor capacitors (MISCAP) with Pt electrodes are experimentally examined for various annealing temperatures and ambient conditions.

Original languageEnglish
Title of host publicationECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5
Subtitle of host publicationNew Materials, Processes, and Equipment
Pages233-239
Number of pages7
Edition1
DOIs
Publication statusPublished - 2009 Dec 1
EventInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting - San Francisco, CA, United States
Duration: 2009 May 242009 May 29

Publication series

NameECS Transactions
Number1
Volume19
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

OtherInternational Symposium on Advanced Gate Stack, Source/Drain and Channel Engineering for Si-based CMOS: New Materials, Processes and Equipment - 215th ECS Meeting
CountryUnited States
CitySan Francisco, CA
Period09/5/2409/5/29

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Fingerprint Dive into the research topics of 'The effect of NH<sub>3</sub> on the interface of HfO<sub>2</sub> and Al<sub>2</sub>O<sub>3</sub> films on GaAs (100) surfaces'. Together they form a unique fingerprint.

  • Cite this

    Suh, D. C., Cho, Y. D., Ko, D. H., Chung, K. B., Cho, M. H., & Lee, Y. (2009). The effect of NH3 on the interface of HfO2 and Al2O3 films on GaAs (100) surfaces. In ECS Transactions - Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 5: New Materials, Processes, and Equipment (1 ed., pp. 233-239). (ECS Transactions; Vol. 19, No. 1). https://doi.org/10.1149/1.3118949