The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination

Ji Sim Jung; Kwang Hee Lee; Kyoung Seok Son; Joon Seok Park; Tae Sang Kim; Jong Hyun Seo; Jae Hong Jeon; Mun Pyo Hong; Jang Yeon Kwon; Bonwon Koo; Sangyun Lee

doi:10.1149/1.3481710

The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination

Ji Sim Jung, Kwang Hee Lee, Kyoung Seok Son, Joon Seok Park, Tae Sang Kim, Jong Hyun Seo, Jae Hong Jeon, Mun Pyo Hong, Jang Yeon Kwon, Bonwon Koo, Sangyun Lee

School of Integrated Technology

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

Abstract

Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiO_x layer grown at a relatively high temperature with an additional SiN_x film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO₂ film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.

Original language	English
Pages (from-to)	H376-H378
Journal	Electrochemical and Solid-State Letters
Volume	13
Issue number	11
DOIs	https://doi.org/10.1149/1.3481710
Publication status	Published - 2010

All Science Journal Classification (ASJC) codes

Chemical Engineering(all)
Materials Science(all)
Physical and Theoretical Chemistry
Electrochemistry
Electrical and Electronic Engineering

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10.1149/1.3481710

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abstract = "Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiOx layer grown at a relatively high temperature with an additional SiNx film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO2 film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.",

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AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Son, Kyoung Seok

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Seo, Jong Hyun

AU - Jeon, Jae Hong

AU - Hong, Mun Pyo

AU - Kwon, Jang Yeon

AU - Koo, Bonwon

AU - Lee, Sangyun

PY - 2010

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AB - Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiOx layer grown at a relatively high temperature with an additional SiNx film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO2 film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.

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The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination

Abstract

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