The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination

Ji Sim Jung, Kwang Hee Lee, Kyoung Seok Son, Joon Seok Park, Tae Sang Kim, Jong Hyun Seo, Jae Hong Jeon, Mun Pyo Hong, Jang Yeon Kwon, Bonwon Koo, Sangyun Lee

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Abstract

Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiOx layer grown at a relatively high temperature with an additional SiNx film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO2 film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.

Original languageEnglish
Pages (from-to)H376-H378
JournalElectrochemical and Solid-State Letters
Volume13
Issue number11
DOIs
Publication statusPublished - 2010 Sep 20

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All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering

Cite this

Jung, J. S., Lee, K. H., Son, K. S., Park, J. S., Kim, T. S., Seo, J. H., Jeon, J. H., Hong, M. P., Kwon, J. Y., Koo, B., & Lee, S. (2010). The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination. Electrochemical and Solid-State Letters, 13(11), H376-H378. https://doi.org/10.1149/1.3481710