The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination

Ji Sim Jung, Kwang Hee Lee, Kyoung Seok Son, Joon Seok Park, Tae Sang Kim, Jong Hyun Seo, Jae Hong Jeon, Mun Pyo Hong, Jang Yeon Kwon, Bonwon Koo, Sangyun Lee

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiOx layer grown at a relatively high temperature with an additional SiNx film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO2 film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.

Original languageEnglish
Pages (from-to)H376-H378
JournalElectrochemical and Solid-State Letters
Volume13
Issue number11
DOIs
Publication statusPublished - 2010 Sep 20

Fingerprint

Thin film transistors
Passivation
passivity
transistors
Lighting
illumination
thin films
shift
moisture
Moisture
Semiconductor materials
degradation
Degradation
Temperature

All Science Journal Classification (ASJC) codes

  • Chemical Engineering(all)
  • Materials Science(all)
  • Physical and Theoretical Chemistry
  • Electrical and Electronic Engineering
  • Electrochemistry

Cite this

Jung, Ji Sim ; Lee, Kwang Hee ; Son, Kyoung Seok ; Park, Joon Seok ; Kim, Tae Sang ; Seo, Jong Hyun ; Jeon, Jae Hong ; Hong, Mun Pyo ; Kwon, Jang Yeon ; Koo, Bonwon ; Lee, Sangyun. / The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination. In: Electrochemical and Solid-State Letters. 2010 ; Vol. 13, No. 11. pp. H376-H378.
@article{ee5bfee128dd4bc9851814c3febaf99b,
title = "The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination",
abstract = "Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiOx layer grown at a relatively high temperature with an additional SiNx film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO2 film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.",
author = "Jung, {Ji Sim} and Lee, {Kwang Hee} and Son, {Kyoung Seok} and Park, {Joon Seok} and Kim, {Tae Sang} and Seo, {Jong Hyun} and Jeon, {Jae Hong} and Hong, {Mun Pyo} and Kwon, {Jang Yeon} and Bonwon Koo and Sangyun Lee",
year = "2010",
month = "9",
day = "20",
doi = "10.1149/1.3481710",
language = "English",
volume = "13",
pages = "H376--H378",
journal = "Electrochemical and Solid-State Letters",
issn = "1099-0062",
publisher = "Electrochemical Society, Inc.",
number = "11",

}

Jung, JS, Lee, KH, Son, KS, Park, JS, Kim, TS, Seo, JH, Jeon, JH, Hong, MP, Kwon, JY, Koo, B & Lee, S 2010, 'The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination', Electrochemical and Solid-State Letters, vol. 13, no. 11, pp. H376-H378. https://doi.org/10.1149/1.3481710

The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination. / Jung, Ji Sim; Lee, Kwang Hee; Son, Kyoung Seok; Park, Joon Seok; Kim, Tae Sang; Seo, Jong Hyun; Jeon, Jae Hong; Hong, Mun Pyo; Kwon, Jang Yeon; Koo, Bonwon; Lee, Sangyun.

In: Electrochemical and Solid-State Letters, Vol. 13, No. 11, 20.09.2010, p. H376-H378.

Research output: Contribution to journalArticle

TY - JOUR

T1 - The effect of passivation layers on the negative bias instability of Ga-In-Zn-O thin film transistors under illumination

AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Son, Kyoung Seok

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Seo, Jong Hyun

AU - Jeon, Jae Hong

AU - Hong, Mun Pyo

AU - Kwon, Jang Yeon

AU - Koo, Bonwon

AU - Lee, Sangyun

PY - 2010/9/20

Y1 - 2010/9/20

N2 - Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiOx layer grown at a relatively high temperature with an additional SiNx film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO2 film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.

AB - Ga-In-Zn-O (GIZO) thin film transistors (TFTs) with disparate passivation structures were fabricated and their stabilities were compared. The devices were subjected to a negative bias stress with simultaneous exposure to visible light. TFT that incorporates a dual passivation composed of a SiOx layer grown at a relatively high temperature with an additional SiNx film deposited shows only -0.8 V Vth shift, whereas a -5.7 V shift was observed for a TFT covered by a single SiO2 film. The device degradation is susceptible to the ability of protecting external moisture, which may adsorb on the surface of the GIZO semiconductor to create donor states therein.

UR - http://www.scopus.com/inward/record.url?scp=77956573609&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77956573609&partnerID=8YFLogxK

U2 - 10.1149/1.3481710

DO - 10.1149/1.3481710

M3 - Article

AN - SCOPUS:77956573609

VL - 13

SP - H376-H378

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

SN - 1099-0062

IS - 11

ER -