@inproceedings{fdd6084bc9974f6f96fcd08cf45e680b,
title = "The effect of periodic relaxation on the growth behavior and electrical properties of atomic layer deposited PbTiO3 thin film",
abstract = "Atomic layer deposition (ALD) is a promising technique for growing thin films on complicated 3-dimensional structures owing to its ability to achieve a uniform composition and conformal thickness. However, the growth rate and composition along the thickness direction are not necessarily uniform due to several reasons. In this study, enhanced controllability of the composition of atomic layer deposited PbTiO3 film was achieved by dividing the overall deposition cycle into several groups with periodic relaxation. The structural and electrical properties of the films deposited were investigated. The effects of a post-deposition treatment, different electrode materials and the 2-step growth on the structural and electrical properties of the PbTiO 3 film were investigated.",
author = "Park, {M. H.} and Lee, {H. J.} and Kim, {G. H.} and Hwang, {C. S.}",
year = "2009",
doi = "10.1149/1.3122136",
language = "English",
isbn = "9781566777100",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "2",
pages = "815--828",
booktitle = "Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics 10",
edition = "2",
note = "International Symposium on Silicon Nitride, Silicon Dioxide, and Emerging Dielectrics - 215th Meeting of the Electrochemical Society ; Conference date: 24-05-2009 Through 29-05-2009",
}