We propose a simple theoretical model to predict the exposure profiles of a photoresist obtained with evanescent fields of nanoapertures. Assuming the electric field intensity to be a Gaussian distribution function with an exponential decay, the top critical dimension and the depth of the photoresist profile are described with analytic formulas. The profiles are analyzed as a function of the photoresist contrast and the electric field intensity decay length.
Bibliographical noteFunding Information:
This work was supported by “Nano R&D Program” of Korea Science and Engineering Foundation (Project No. M10609000019-06M0900-01910) and “Development Program of Nano Process Equipments” of Korea Ministry of Commerce, Industry and Energy (Project No. 10030259-2007-01).
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)