The effect of photoresist contrast on the exposure profiles obtained with evanescent fields of nanoapertures

Eungman Lee, Jae Won Hahn

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11 Citations (Scopus)

Abstract

We propose a simple theoretical model to predict the exposure profiles of a photoresist obtained with evanescent fields of nanoapertures. Assuming the electric field intensity to be a Gaussian distribution function with an exponential decay, the top critical dimension and the depth of the photoresist profile are described with analytic formulas. The profiles are analyzed as a function of the photoresist contrast and the electric field intensity decay length.

Original languageEnglish
Article number083550
JournalJournal of Applied Physics
Volume103
Issue number8
DOIs
Publication statusPublished - 2008

Bibliographical note

Funding Information:
This work was supported by “Nano R&D Program” of Korea Science and Engineering Foundation (Project No. M10609000019-06M0900-01910) and “Development Program of Nano Process Equipments” of Korea Ministry of Commerce, Industry and Energy (Project No. 10030259-2007-01).

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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