The effect of silylation agent treatment on the dielectric properties of SiO aerogel films

Sang Bae Jung; Hyung Ho Park

doi:10.1109/IMNC.2000.872762

The effect of silylation agent treatment on the dielectric properties of SiO aerogel films

Sang Bae Jung, Hyung Ho Park

Department of Materials Science and Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

SiO₂ aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO₂ aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.

Original language	English
Title of host publication	Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	278-279
Number of pages	2
ISBN (Electronic)	4891140046, 9784891140045
DOIs	https://doi.org/10.1109/IMNC.2000.872762
Publication status	Published - 2000 Jan 1
Event	International Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan Duration: 2000 Jul 11 → 2000 Jul 13

Other

Other	International Microprocesses and Nanotechnology Conference, MNC 2000
Country	Japan
City	Tokyo
Period	00/7/11 → 00/7/13

All Science Journal Classification (ASJC) codes

Biotechnology
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/IMNC.2000.872762

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Jung, S. B., & Park, H. H. (2000). The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 278-279). [872762] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872762

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abstract = "SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.",

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Jung, SB & Park, HH 2000, The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. in Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000., 872762, Institute of Electrical and Electronics Engineers Inc., pp. 278-279, International Microprocesses and Nanotechnology Conference, MNC 2000, Tokyo, Japan, 00/7/11. https://doi.org/10.1109/IMNC.2000.872762

The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. / Jung, Sang Bae; Park, Hyung Ho.

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 278-279 872762.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.

AB - SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.

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