TY - GEN
T1 - The effect of silylation agent treatment on the dielectric properties of SiO aerogel films
AU - Jung, Sang Bae
AU - Park, Hyung Ho
N1 - Copyright:
Copyright 2016 Elsevier B.V., All rights reserved.
PY - 2000
Y1 - 2000
N2 - SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.
AB - SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.
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U2 - 10.1109/IMNC.2000.872762
DO - 10.1109/IMNC.2000.872762
M3 - Conference contribution
AN - SCOPUS:84952004899
T3 - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
SP - 278
EP - 279
BT - Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - International Microprocesses and Nanotechnology Conference, MNC 2000
Y2 - 11 July 2000 through 13 July 2000
ER -