The effect of silylation agent treatment on the dielectric properties of SiO aerogel films

Sang Bae Jung, Hyung Ho Park

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.

Original languageEnglish
Title of host publicationDigest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages278-279
Number of pages2
ISBN (Electronic)4891140046, 9784891140045
DOIs
Publication statusPublished - 2000 Jan 1
EventInternational Microprocesses and Nanotechnology Conference, MNC 2000 - Tokyo, Japan
Duration: 2000 Jul 112000 Jul 13

Other

OtherInternational Microprocesses and Nanotechnology Conference, MNC 2000
CountryJapan
CityTokyo
Period00/7/1100/7/13

Fingerprint

Aerogels
Hydroxyl Radical
Dielectric properties
Adsorption
Permittivity
Moisture
Porosity
Hydrogen Bonding
Condensation reactions
Dipole moment
Microelectronics
Equipment and Supplies
Hydrogen bonds
Research
Fabrication

All Science Journal Classification (ASJC) codes

  • Biotechnology
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials

Cite this

Jung, S. B., & Park, H. H. (2000). The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000 (pp. 278-279). [872762] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMNC.2000.872762
Jung, Sang Bae ; Park, Hyung Ho. / The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. pp. 278-279
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Jung, SB & Park, HH 2000, The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. in Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000., 872762, Institute of Electrical and Electronics Engineers Inc., pp. 278-279, International Microprocesses and Nanotechnology Conference, MNC 2000, Tokyo, Japan, 00/7/11. https://doi.org/10.1109/IMNC.2000.872762

The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. / Jung, Sang Bae; Park, Hyung Ho.

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc., 2000. p. 278-279 872762.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.

AB - SiO2 aerogel has been investigated for the application of interlayer dielectrics (ILD) in microelectronics. Its lowest permittivity originated in its inherent porous structure among various candidate materials makes it applicable to the ULSI devices. However, because of its high porosity and large surface area, moisture adsorption occurred after fabrication of SiO2 aerogel film. A number of OH groups due to incomplete condensation reaction induce moisture adsorption through hydrogen bonding. This hydrophilic characteristic of hydroxyl group obstructs its application to ILD. Besides, dipole moment of OH group is higher than alkyl or alkoxy group. So it is inferred that replacement of this hydroxyl group with hydrophobic alkyl group lowers the dielectric constant of aerogel. In this research, silylation agent such as trimethylchlorosilane (TMCS) was used to remove hydroxyl group and protect aerogel surface.

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Jung SB, Park HH. The effect of silylation agent treatment on the dielectric properties of SiO aerogel films. In Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000. Institute of Electrical and Electronics Engineers Inc. 2000. p. 278-279. 872762 https://doi.org/10.1109/IMNC.2000.872762