La1 - xSrxMnO3 (LSMO, x = 0.1, 0.3, and 0.5) thin films were prepared on Pt/Ti/SiO2/Si substrates using a radio frequency magnetron sputtering technique at a substrate temperature of 450 C. The effects of Sr contents on the physical, chemical, and electrical properties of films were systematically investigated. X-ray diffraction results showed that the growth orientation and crystallinity of films were affected by Sr content. The Mn valence transition was analyzed using X-ray photoelectron spectroscopy. The conversion of Mn3 + valence to Mn4 + with increasing Sr2 + concentration generated more Mn 3 +-O2 --Mn4 + bonds, and caused initial resistance change of LSMO films. The largest resistive switching of the La 0.7Sr0.3MnO3 film having a (110) plane preferred orientation is discussed.
Bibliographical noteFunding Information:
This work was supported by SK Hynix Inc. of Korea and by the second stage of the Brain Korea 21 project in 2011.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry